Cold-rolled Ti/Al laminated composites were annealed at 525−625℃for 0−128 h,and the interfacial microstructure evolution was investigated.The results indicate that only the TiAl_(3) phase was formed at the Ti/Al inte...Cold-rolled Ti/Al laminated composites were annealed at 525−625℃for 0−128 h,and the interfacial microstructure evolution was investigated.The results indicate that only the TiAl_(3) phase was formed at the Ti/Al interface;most of TiAl_(3) grains were fine equiaxed with average sizes ranging from hundreds of nanometers to several microns and the TiAl_(3) grain size increased with increasing annealing time and/or temperature,but the effect of annealing temperature on the TiAl_(3) grain size was far greater than that of annealing time.The growth of the TiAl_(3) phase consisted of two stages.The initial stage was governed by chemical reaction with a reaction activation energy of 195.75 kJ/mol,and the reaction rate constant of the TiAl_(3) phase was larger as the Ti/Al interface was bonded with fresh surfaces.At the second stage,the growth was governed by diffusion,the diffusion activation energy was 33.69 kJ/mol,and the diffusion growth rate constant of the TiAl_(3) phase was mainly determined by the grain boundary diffusion owing to the smaller TiAl_(3) grain size.展开更多
Transient liquid phase(TLP)bonding is a potential high-temperature(HT)electron packaging technology that is used inthe interconnection of wide band-gap semiconductors.This study focused on the mechanism of intermetall...Transient liquid phase(TLP)bonding is a potential high-temperature(HT)electron packaging technology that is used inthe interconnection of wide band-gap semiconductors.This study focused on the mechanism of intermetallic compounds(IMCs)evolution in Ag/Sn TLP soldering at different temperatures.Experimental results indicated that morphologies of Ag3Sn grains mainlywere scallop-type,and some other shapes such as prism,needle,hollow column,sheet and wire of Ag3Sn grains were also observed,which was resulted from their anisotropic growths.However,the scallop-type Ag3Sn layer turned into more planar with prolongingsoldering time,due to grain coarsening and anisotropic mass flow of Ag atoms from substrate.Furthermore,a great amount ofnano-Ag3Sn particles were found on the surfaces of Ag3Sn grains,which were formed in Ag-rich areas of the molten Sn and adsorbedby the Ag3Sn grains during solidification process.Growth kinetics of the Ag3Sn IMCs in TLP soldering followed a parabolicrelationship with soldering time,and the growth rate constants of250,280and320°C were calculated as5.83×10-15m2/s,7.83×10-15m2/s and2.83×10-14m2/s,respectively.Accordingly,the activation energy of the reaction was estimated about58.89kJ/mol.展开更多
A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making curren...A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.展开更多
基金the financial supports from the S&T Program of Hebei Province,China(No.20373901D)the National Natural Science Foundation of China(Nos.51807047,51804095)+2 种基金the National Science Foundation of Hebei Province,China(No.E2019402433)the Youth Top Talents Science and Technology Research Project of Hebei Province University,China(No.BJ2019003)the Research and Development Project of Science and Technology of Handan City,China(No.19422111008-19).
文摘Cold-rolled Ti/Al laminated composites were annealed at 525−625℃for 0−128 h,and the interfacial microstructure evolution was investigated.The results indicate that only the TiAl_(3) phase was formed at the Ti/Al interface;most of TiAl_(3) grains were fine equiaxed with average sizes ranging from hundreds of nanometers to several microns and the TiAl_(3) grain size increased with increasing annealing time and/or temperature,but the effect of annealing temperature on the TiAl_(3) grain size was far greater than that of annealing time.The growth of the TiAl_(3) phase consisted of two stages.The initial stage was governed by chemical reaction with a reaction activation energy of 195.75 kJ/mol,and the reaction rate constant of the TiAl_(3) phase was larger as the Ti/Al interface was bonded with fresh surfaces.At the second stage,the growth was governed by diffusion,the diffusion activation energy was 33.69 kJ/mol,and the diffusion growth rate constant of the TiAl_(3) phase was mainly determined by the grain boundary diffusion owing to the smaller TiAl_(3) grain size.
基金Project(51375260) supported by the National Natural Science Foundation of China
文摘Transient liquid phase(TLP)bonding is a potential high-temperature(HT)electron packaging technology that is used inthe interconnection of wide band-gap semiconductors.This study focused on the mechanism of intermetallic compounds(IMCs)evolution in Ag/Sn TLP soldering at different temperatures.Experimental results indicated that morphologies of Ag3Sn grains mainlywere scallop-type,and some other shapes such as prism,needle,hollow column,sheet and wire of Ag3Sn grains were also observed,which was resulted from their anisotropic growths.However,the scallop-type Ag3Sn layer turned into more planar with prolongingsoldering time,due to grain coarsening and anisotropic mass flow of Ag atoms from substrate.Furthermore,a great amount ofnano-Ag3Sn particles were found on the surfaces of Ag3Sn grains,which were formed in Ag-rich areas of the molten Sn and adsorbedby the Ag3Sn grains during solidification process.Growth kinetics of the Ag3Sn IMCs in TLP soldering followed a parabolicrelationship with soldering time,and the growth rate constants of250,280and320°C were calculated as5.83×10-15m2/s,7.83×10-15m2/s and2.83×10-14m2/s,respectively.Accordingly,the activation energy of the reaction was estimated about58.89kJ/mol.
文摘A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.
