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界面粗糙度对真空紫外光学薄膜光谱性能影响研究
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作者 黄凯 郭春 孔明东 《半导体光电》 CAS 北大核心 2023年第2期228-233,共6页
设计了193 nm窄角度和宽角度入射增透膜以及正入射高反膜,其中增透膜s和p偏振光透射率的最大偏差分别为0.17%和0.44%。结合标量散射理论和等效吸收层近似理论,多层膜间的粗糙界面等效为薄的吸收层,基于薄膜本征传输矩阵计算分析了不同... 设计了193 nm窄角度和宽角度入射增透膜以及正入射高反膜,其中增透膜s和p偏振光透射率的最大偏差分别为0.17%和0.44%。结合标量散射理论和等效吸收层近似理论,多层膜间的粗糙界面等效为薄的吸收层,基于薄膜本征传输矩阵计算分析了不同界面粗糙度下的光谱性能。研究发现,薄膜光谱性能随着界面均方根粗糙度的增加而急剧退化,高反膜反射带宽也随之降低,达到4 nm时,宽角度入射增透膜和高反膜光谱性能在193 nm处分别退化2.04%和2.09%。界面粗糙度是影响高光谱性能真空紫外光学薄膜制备的重要因素。 展开更多
关键词 真空紫外光学薄膜 界面粗糙度 等效吸收层 增透膜 高反膜
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真空紫外光学的科学进展与改进
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作者 尼启良 林景全 《光机电信息》 1997年第6期6-10,共5页
1.引言同步辐射的出现对光学元件的发展起到极大的推动作用,尤其在真空紫外波段元件的性能越来越好。但是可用的元件仅有:反射镜、滤光片、波带片、光栅、多层膜。同时人们已经注意到科学进步和仪器改进之间的密切关系,对物质在VUV波段... 1.引言同步辐射的出现对光学元件的发展起到极大的推动作用,尤其在真空紫外波段元件的性能越来越好。但是可用的元件仅有:反射镜、滤光片、波带片、光栅、多层膜。同时人们已经注意到科学进步和仪器改进之间的密切关系,对物质在VUV波段光学特性的理解开创了探索光学仪器性能的可能性,例如。 展开更多
关键词 光束线 同步辐射 元件 真空紫外光学
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真空紫外薄膜光学常数的研究
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作者 韩赋 钱莉民 李福田 《光学机械》 CSCD 1990年第6期1-9,共9页
本文讨论了通过“多约束非线性方程组”解析真空紫外薄膜光学常数的方法。编制的VUV—ROCP微机软件,可由真空紫外反射率解析出真空紫外薄膜光学常数和入射光的偏振度。运用该软件对不同工艺的Au、Pt、Al样品的反射率进行解析,得到了它... 本文讨论了通过“多约束非线性方程组”解析真空紫外薄膜光学常数的方法。编制的VUV—ROCP微机软件,可由真空紫外反射率解析出真空紫外薄膜光学常数和入射光的偏振度。运用该软件对不同工艺的Au、Pt、Al样品的反射率进行解析,得到了它们的真空紫外薄膜光学常数,并与国外报道的结果进行了比较。 展开更多
关键词 真空紫外光学 常数 薄膜
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软X射线—真空紫外反射率计
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作者 陈波 马玲 李福田 《光学机械》 CSCD 1991年第6期21-25,共5页
软X射线-真空紫外反射率计系统由光源、单色仪、反射率计、电子学及微机控制系统等几部分组成。可完成各种光学镜面、光栅、成像系统等的性能评价工作,反射率计真空室直径φ800mm,长1200mm,工作波段25~100nm,更换光源和探测器可扩展到1... 软X射线-真空紫外反射率计系统由光源、单色仪、反射率计、电子学及微机控制系统等几部分组成。可完成各种光学镜面、光栅、成像系统等的性能评价工作,反射率计真空室直径φ800mm,长1200mm,工作波段25~100nm,更换光源和探测器可扩展到1~250nm,角分辨率0.03°,扫描范围0~90°。 展开更多
关键词 软X射线 真空紫外光学 性能评价 反射率计 光栅效率
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Photoionization Mass Spectrometric and Kinetic Modeling of Low-pressure Pyrolysis of Benzene 被引量:2
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作者 杨玖重 赵龙 +2 位作者 蔡江淮 齐飞 李玉阳 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2013年第3期245-251,I0003,共8页
Pyrolysis of benzene at 30 Torr was studied from 1360 K to 1820 K in this work. Synchrotron vacuum ultraviolet photoionization mass spectrometry was employed to detect the pyroly- sis products such as radicals, isomer... Pyrolysis of benzene at 30 Torr was studied from 1360 K to 1820 K in this work. Synchrotron vacuum ultraviolet photoionization mass spectrometry was employed to detect the pyroly- sis products such as radicals, isomers and polycyclic aromatic hydrocarbons, and measure their mole fraction profiles versus temperature. A low-pressure pyrolysis model of benzene was developed and validated by the experimental results. Rate of production analysis was performed to reveal the major reaction networks in both fuel decomposition and aromatic growth processes. It is concluded that benzene is mainly decomposed via H-abstraction reaction to produce phenyl and partly decomposed via unimolecular decomposition reac- tions to produce propargyl or phenyl. The decomposition process stops at the formation of acetylene and polyyne species like diacetylene and 1,3,5-hexatriyne due to their high thermal stabilities. Besides, the aromatic growth process in the low-pressure pyrolysis of benzene is concluded to initiate from benzene and phenyl, and is controlled by the even carbon growth mechanism due to the inhibited formation of C5 and C7 species which play important roles in the odd carbon growth mechanism. 展开更多
关键词 BENZENE Low-pressure pyrolysis PAH formation Synchrotron vacuum ultra-violet photoionization mass spectrometry Kinetic model
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Growth of Strained Si_(1-x)Ge_x Layer by UV/UHV/CVD
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作者 胡辉勇 张鹤鸣 +6 位作者 戴显英 李开成 王伟 朱永刚 王顺祥 崔晓英 王喜媛 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第4期641-644,共4页
Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,respectively.At such... Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si_ 1-xGe_x and multilayer Si_ 1-xGe_x/Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing high-quality Si_ 1-xGe_x/Si strained layers. 展开更多
关键词 Si_ 1-xGe_x ultrahigh vacuum ultraviolet light chemical vapor deposition
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Infrared-Vacuum Ultraviolet Spectroscopic and Theoretical Study of Neutral Trimethylamine Dimer
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作者 张冰冰 孔祥涛 +6 位作者 蒋述康 赵志 谢华 郝策 戴东旭 杨学明 江凌 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2017年第6期691-695,I0002,共6页
Infrared-vacuum ultraviolet (IR-VUV) spectra of neutral trimethylamine dimer were mea- sured in the 2500-3800 cm-1 region. Quantum chemical calculations were performed to identify the structure of the low-lying isom... Infrared-vacuum ultraviolet (IR-VUV) spectra of neutral trimethylamine dimer were mea- sured in the 2500-3800 cm-1 region. Quantum chemical calculations were performed to identify the structure of the low-lying isomers and to assign the observed spectral features. The bands at 2975 and 2949 cm-1 were assigned to the antisymmetric C-H stretching and the band at 2823 cm-1 to the symmetric C-H stretching, respectively. The 2739 cm-1 band was due to the CH3 bending overtone, which disappeared at low IR laser power of 1 mJ/mm2. The extra band at 2773 cm-1 could be due to Fermi resonance behavior of the light isotopologue, these are often close in energy and can strongly mix through cubic terms in the potential function. Experimental and theoretical results indicate the likely coexistence of multiple structures. The peak widths of IR spectra of neutral trimethylamine dimer are not significantly affected by the structural transformation, allowing the stretching modes to be well resolved. 展开更多
关键词 Infrared-vacuum ultraviolet Neutral cluster TRIMETHYLAMINE Quantum chemical calculation
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