O482.31 97052834铜—多孔硅光致发光和红外光谱研究=Study ofphotoluminescence and infrared spectra on Cu—porous silicon[刊,中]/郭亨群(华侨大学应用物理系.福建,泉州(362011))∥光子学报.—1996,25(7).—605—608报道了铜—多...O482.31 97052834铜—多孔硅光致发光和红外光谱研究=Study ofphotoluminescence and infrared spectra on Cu—porous silicon[刊,中]/郭亨群(华侨大学应用物理系.福建,泉州(362011))∥光子学报.—1996,25(7).—605—608报道了铜—多孔硅的稳态光致发光,瞬态光致发光和傅里叶变换红外光谱的研究,讨论了铜在多孔硅表面吸附产生的表面电子态所引起的非辐射复合中心的作用。图5参11(严兰)O482.31 97052835光子图象的X^2拟合信号检验=Signal test in photonimages by X^2 regression[刊,中]/陈天明,俞信,王苏生(北京理工大学光电工程系.北京(100081))展开更多
The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observ...The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increasing temperature.A nonradiative path with characteristic activation energy of 8 meV is found to dominate at room temperature.The PL measurement also indicates that like in inorganic semiconductors,other types of excitation,for example,free carriers,could be responsible for the photoelectric processes.展开更多
文摘O482.31 97052834铜—多孔硅光致发光和红外光谱研究=Study ofphotoluminescence and infrared spectra on Cu—porous silicon[刊,中]/郭亨群(华侨大学应用物理系.福建,泉州(362011))∥光子学报.—1996,25(7).—605—608报道了铜—多孔硅的稳态光致发光,瞬态光致发光和傅里叶变换红外光谱的研究,讨论了铜在多孔硅表面吸附产生的表面电子态所引起的非辐射复合中心的作用。图5参11(严兰)O482.31 97052835光子图象的X^2拟合信号检验=Signal test in photonimages by X^2 regression[刊,中]/陈天明,俞信,王苏生(北京理工大学光电工程系.北京(100081))
基金supported by the Ministry of Science and Technology of China (Grant No.2009CB929200)the National Natural Science Foundation of China (Grant No.10621063)the Science and Technology Commission of Shanghai Municipality (Grant No.08JC1402300)
文摘The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increasing temperature.A nonradiative path with characteristic activation energy of 8 meV is found to dominate at room temperature.The PL measurement also indicates that like in inorganic semiconductors,other types of excitation,for example,free carriers,could be responsible for the photoelectric processes.
