IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when ...IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.展开更多
There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Rad...There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Radiation Protection） has published new exposure guidelines with regard to these fields. The aim of this paper is to demonstrate the calculation of the currents and electric fields induced in the human body by external electric fields at 60 Hz, using numerical human models of anatomically-realistic human bodies, and to compare those results with the basic restrictions proposed by the new guidelines. As a result, in the case that a human is exposed to an electric field of 1 kV/m at 60 Hz the short-circuit current of 18 μA flows though the ankles. Furthermore, the electric field of 40 mV/m in the nervous tissue of the adult model is induced by exposure to external electric fields at the reference level, which is enough smaller than the basic restrictions established in the ICNIRP guidelines for occupational exposure.展开更多
Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high en...Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so on.Based on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm.In consideration of the isotope's self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP.In the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively.展开更多
文摘IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
文摘There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Radiation Protection） has published new exposure guidelines with regard to these fields. The aim of this paper is to demonstrate the calculation of the currents and electric fields induced in the human body by external electric fields at 60 Hz, using numerical human models of anatomically-realistic human bodies, and to compare those results with the basic restrictions proposed by the new guidelines. As a result, in the case that a human is exposed to an electric field of 1 kV/m at 60 Hz the short-circuit current of 18 μA flows though the ankles. Furthermore, the electric field of 40 mV/m in the nervous tissue of the adult model is induced by exposure to external electric fields at the reference level, which is enough smaller than the basic restrictions established in the ICNIRP guidelines for occupational exposure.
基金supported by the China Postdoctoral Science Foundation Funded Project (Grant No. 20100481140)the Nanjing University of Aeronautics and Astronautics Basic Research Funded Project (Grant No. Y1065-063)
文摘Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so on.Based on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm.In consideration of the isotope's self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP.In the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively.
