The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a p...The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.展开更多
IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when ...IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.展开更多
SnO2 nanosheet films about 200 nm in thickness are successfully fabricated on fluorine-doped tin oxide （FTO） glass by a facile solution-grown approach. The prepared SnO2 nanosheet film is appfied as an interfacial l...SnO2 nanosheet films about 200 nm in thickness are successfully fabricated on fluorine-doped tin oxide （FTO） glass by a facile solution-grown approach. The prepared SnO2 nanosheet film is appfied as an interfacial layer between the nanocrystalline TiO2 film and the FTO substrate in dye-sensitized solar cells （DSCs）. Experimental results show that the introduction of a SnO2 nanosheet film not only suppresses the electron back-transport reaction at the electrolyte/FTO interface but also provides an efficient electron transition channel along the SnO2 nanosheets, and as a result, increasing the open circuit voltage and short current density, and finally improving the conversion efficiency for the DSCs from 3.89% to 4.62%.展开更多
文摘The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
文摘IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
基金supported by the National Natural Science Foundation of China (Nos.20903073 and 20671070)the Key Project of Education Ministry of China (No.207008)+1 种基金the Natural Science Foundation of Tianjin (No.09JCYBJC07000)the Science and Technology Developing Foundation for Tianjin Universities (No.20080309)
文摘SnO2 nanosheet films about 200 nm in thickness are successfully fabricated on fluorine-doped tin oxide （FTO） glass by a facile solution-grown approach. The prepared SnO2 nanosheet film is appfied as an interfacial layer between the nanocrystalline TiO2 film and the FTO substrate in dye-sensitized solar cells （DSCs）. Experimental results show that the introduction of a SnO2 nanosheet film not only suppresses the electron back-transport reaction at the electrolyte/FTO interface but also provides an efficient electron transition channel along the SnO2 nanosheets, and as a result, increasing the open circuit voltage and short current density, and finally improving the conversion efficiency for the DSCs from 3.89% to 4.62%.
