A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly obs...A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carders through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 10874220)the Main Direction Program of Knowledge Innovation of Chinese Academy of Sciences (Grant No. KJCX2-YW- W30)the Natinal Basic Research Program of China from the MOST (Grant No. 2011CB932704)
文摘A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carders through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point.
