GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS...GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS) are combined in determining the nitrogen contents in the samples.Room temperature photoluminescence (RTPL) measurement is also used in characterizing.The influence of different Ga precursors on GaNAs quality is investigated.Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa).Nitrogen content of 5 688% is achieved with TEGa.The peak wavelength in RTPL measurement is measured to be 1278 5nm.展开更多
Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH...Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.展开更多
文摘GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS) are combined in determining the nitrogen contents in the samples.Room temperature photoluminescence (RTPL) measurement is also used in characterizing.The influence of different Ga precursors on GaNAs quality is investigated.Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa).Nitrogen content of 5 688% is achieved with TEGa.The peak wavelength in RTPL measurement is measured to be 1278 5nm.
文摘Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.
