InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold curre...InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement.展开更多
The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure...The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10￣(13)cm￣(-3) and electronic capture cross section of 1.72×10￣(12)cm￣2 has been found.It's existence results in the new tunnelling current.展开更多
文摘InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement.
文摘The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10￣(13)cm￣(-3) and electronic capture cross section of 1.72×10￣(12)cm￣2 has been found.It's existence results in the new tunnelling current.
