Strained-Si pMOSFETs on very thin relaxed virtua l SiGe substrates are presented.The 240nm relaxed virtual Si 0.8 Ge 0.2 layer on 100nm low-temperature Si(LT-Si) is grown on Si(100) substrates by molecular be...Strained-Si pMOSFETs on very thin relaxed virtua l SiGe substrates are presented.The 240nm relaxed virtual Si 0.8 Ge 0.2 layer on 100nm low-temperature Si(LT-Si) is grown on Si(100) substrates by molecular beam epitaxy.LT-Si buffer layer is used to release stress of the SiGe layer so as to make it relaxed.DCXRD,AFM,and TEM measurements indicate that the strain relaxed degree of SiGe layer is 85%,RMS roughness is 1.02nm,and threading dislocation density is at most 107cm -2 .At room temperature,a maximum hole mobility of strained-Si pMOSFET is 140cm2/(V·s).Device performance is comparable to that of devices achieved on several microns thick relaxed virtual SiGe substrates.展开更多
A novel MBE-grown method using low-temperature (L T) Si technology is introduced into the fabrication of strained Si channel heter ojunction pMOSFETs.By sandwiching a low-temperature Si layer between Si buffer and S...A novel MBE-grown method using low-temperature (L T) Si technology is introduced into the fabrication of strained Si channel heter ojunction pMOSFETs.By sandwiching a low-temperature Si layer between Si buffer and SiGe layer,the strain relaxation degree of the SiGe layer is increased.At th e same time,the threading dislocations (TDs) are hold back from propagating to t he surface.As a result,the thickness of relaxed Si 1-xGe x epitax y layer on bulk silicon is reduced from several micrometers using UHVCVD to less than 400nm(x=0.2),which will improve the heat dissipation of devices.AFM t ests of strained Si surface show RMS is less than 1.02nm.The DC characters meas ured by HP 4155B indicate that hole mobility μ p has 25% of maximum enhanc ement compared to that of bulk Si pMOSFET processed similarly.展开更多
The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal dif...The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.展开更多
H2Ge=Si： and its derivatives （X2Ge=Si：, X=H, Me, F, C1, Br, Ph, Ar, ...） are new species. Its cycloaddition reactions are new area for the study of silylene chemistry. The cycloaddition reaction mechanism of singl...H2Ge=Si： and its derivatives （X2Ge=Si：, X=H, Me, F, C1, Br, Ph, Ar, ...） are new species. Its cycloaddition reactions are new area for the study of silylene chemistry. The cycloaddition reaction mechanism of singlet H2Ge=Si： and formaldehyde has been investigated with the MP2/aug-cc-pVDZ method. From the potential energy profile, it could be predicted that the reaction has one dominant reaction pathway. The reaction rule is that two reactants firstly form a four-membered Ge-heterocyclic ring silylene through the [2＋2] cycloaddition reaction. Because of the 3p unoccupied orbital of Si： atom in the four-membered Ge-heterocyclic ring silylene and the π orbital of formaldehyde forming a π--p donor-acceptor bond, the four-membered Ge-heterocyclic ring silylene further combines with formaldehyde to form an intermediate. Because the Si： atom in the intermediate undergoes sp3 hybridization after transition state, then the intermediate isomerizes to a spiro-Si-heterocyclic ring compound involving Ge via a transition state. The result indicates the laws of cycloaddition reaction between H2Ge=Si： or its derivatives （X2Ge=Si：, X=H, Me, F, Cl, Br, Ph, Ar, ...） and asymmetric π-bonded compounds are significant for the synthesis of small-ring involving Si and Ge and spiro-Si-heterocyclic ring compounds involving Ge.展开更多
The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained...The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained Si layer(which is deposited on the relaxed SiGe buffer layer) as current channel and can provide a 48 5% improvement in electron mobility while keeping the gate voltage as 1V.展开更多
The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photolu...The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum （FWHM） is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.展开更多
文摘Strained-Si pMOSFETs on very thin relaxed virtua l SiGe substrates are presented.The 240nm relaxed virtual Si 0.8 Ge 0.2 layer on 100nm low-temperature Si(LT-Si) is grown on Si(100) substrates by molecular beam epitaxy.LT-Si buffer layer is used to release stress of the SiGe layer so as to make it relaxed.DCXRD,AFM,and TEM measurements indicate that the strain relaxed degree of SiGe layer is 85%,RMS roughness is 1.02nm,and threading dislocation density is at most 107cm -2 .At room temperature,a maximum hole mobility of strained-Si pMOSFET is 140cm2/(V·s).Device performance is comparable to that of devices achieved on several microns thick relaxed virtual SiGe substrates.
文摘A novel MBE-grown method using low-temperature (L T) Si technology is introduced into the fabrication of strained Si channel heter ojunction pMOSFETs.By sandwiching a low-temperature Si layer between Si buffer and SiGe layer,the strain relaxation degree of the SiGe layer is increased.At th e same time,the threading dislocations (TDs) are hold back from propagating to t he surface.As a result,the thickness of relaxed Si 1-xGe x epitax y layer on bulk silicon is reduced from several micrometers using UHVCVD to less than 400nm(x=0.2),which will improve the heat dissipation of devices.AFM t ests of strained Si surface show RMS is less than 1.02nm.The DC characters meas ured by HP 4155B indicate that hole mobility μ p has 25% of maximum enhanc ement compared to that of bulk Si pMOSFET processed similarly.
文摘The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.
文摘H2Ge=Si： and its derivatives （X2Ge=Si：, X=H, Me, F, C1, Br, Ph, Ar, ...） are new species. Its cycloaddition reactions are new area for the study of silylene chemistry. The cycloaddition reaction mechanism of singlet H2Ge=Si： and formaldehyde has been investigated with the MP2/aug-cc-pVDZ method. From the potential energy profile, it could be predicted that the reaction has one dominant reaction pathway. The reaction rule is that two reactants firstly form a four-membered Ge-heterocyclic ring silylene through the [2＋2] cycloaddition reaction. Because of the 3p unoccupied orbital of Si： atom in the four-membered Ge-heterocyclic ring silylene and the π orbital of formaldehyde forming a π--p donor-acceptor bond, the four-membered Ge-heterocyclic ring silylene further combines with formaldehyde to form an intermediate. Because the Si： atom in the intermediate undergoes sp3 hybridization after transition state, then the intermediate isomerizes to a spiro-Si-heterocyclic ring compound involving Ge via a transition state. The result indicates the laws of cycloaddition reaction between H2Ge=Si： or its derivatives （X2Ge=Si：, X=H, Me, F, Cl, Br, Ph, Ar, ...） and asymmetric π-bonded compounds are significant for the synthesis of small-ring involving Si and Ge and spiro-Si-heterocyclic ring compounds involving Ge.
文摘The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained Si layer(which is deposited on the relaxed SiGe buffer layer) as current channel and can provide a 48 5% improvement in electron mobility while keeping the gate voltage as 1V.
基金supported by the National Natural Science Foundation of China(Nos.61036003 and 61176092)the Ph.D.Programs Foundation of Ministry of Education of China(No.20110121110025)
文摘The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum （FWHM） is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.
