The yttrium as a sintering aid was introduced into polycarbosilane（PCS） to prepare yttrium-containing PCS（PYCS）.Two types of yttrium-containing SiC fibres,the SiC（OY） fibres and the SiC（Y） fibres,were fabricat...The yttrium as a sintering aid was introduced into polycarbosilane（PCS） to prepare yttrium-containing PCS（PYCS）.Two types of yttrium-containing SiC fibres,the SiC（OY） fibres and the SiC（Y） fibres,were fabricated with PYCS.The structural evolution and the associated properties on changing from SiC（OY） to SiC（Y） fibres during the sintering process were studied.The chemical composition of the SiC（OY） fibres is SiC1.53O0.22Y0.005 with an amorphous structure.The composition of SiC（Y） fibres is SiC1.23O0.05Y0.005.The fibres are composed of a large number of β-SiC crystallites with a size of 50 nm and a small amount of α-SiC crystalline.The tensile strength and fracture toughness of the SiC（OY） fibres are 2.25 GPa and 2.37 MPa·m1/2,respectively,and 1.61 GPa,1.91 MPa·m1/2,respectively for SiC（Y） fibres.The SiC（Y） fibres have a higher thermal stability than the SiC（OY） fibres.展开更多
The influence of Si on the stability of TiC in Al melts was studied.It is found that TiC particles in Al melts become unstable with the addition of Si.When the melting temperature is below 890 °C,TiC will react w...The influence of Si on the stability of TiC in Al melts was studied.It is found that TiC particles in Al melts become unstable with the addition of Si.When the melting temperature is below 890 °C,TiC will react with Al and Si to form TiAlxSiy and Al4C3 phases.But if the melt temperature is above 890 ℃,TiC will react with Al and Si to form to Ti3SiC2 and Al4C3.It is considered that the influence of Si on the stability of TiC in Al melts is due to its incursion into TiC crystal lattice during the holding,which will cause serious lattice distortion in TiC and then speed up the out-diffusion of surrounded C atoms.展开更多
We present the fabrication and testing of a silicon carbide （SiC） balanced mass doublended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth. Th...We present the fabrication and testing of a silicon carbide （SiC） balanced mass doublended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth. The device features a material stack that survives corrosive environments and enables high-temperature operation. To perform hightemperature testing, a specialized setup was constructed that allows the tuning fork to be characterized using traditional silicon electronics. The tuning fork has been operated at 600°C in the presence of dry steam for short durations. This tuning fork has also been tested to 64 000 G using a hard-launch, soft-catch shock implemented with a light gas gun. However, the device still has a strain sensitivity of 66 Hz/μe and strain resolution of 0. 045 μe in a 10 kHz bandwidth. As such, this balanced-mass double-ended tuning fork can be used to create a variety of different sensors including strain gauges, accelerometers, gyroscopes, and pressure transducers. Given the adaptable fabrication process flow, this device could be useful to micro-electro-mechanical systems （MEMS） designers creating sensors for a variety of different applications.展开更多
Polycarbosilane containing beryllium(BPCS) precursors was prepared by the reaction of polycarbosilane(PCS) with beryllium acetylacetone(Be(acac)2).The analysis of structures and components of BPCS demonstrates that th...Polycarbosilane containing beryllium(BPCS) precursors was prepared by the reaction of polycarbosilane(PCS) with beryllium acetylacetone(Be(acac)2).The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS.Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C.At 1400 °C,BPCS precursors convert into silicon carbide ceramics.The ceramization of different beryllium content precursors were studied,which show that beryllium plays an important role in the inhibition of crystalline grain growth of β-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.展开更多
To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by...To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by chemical vapor reaction (CVR): a simple and cheap technique to prepare the SiC coating via siliconizing the substrate that was exposed to the mixed vapor (Si and SiO2) at high temperatures (1 923?2 273 K). Then the as-prepared coating was processed by a dipping and drying procedure with tetraethoxysilane as source materials to form SiO2 to fill the cracks and holes. Oxidation tests show that, after oxidation in air at 1 623 K for 10 h and thermal cycling between 1 623 K and room temperature 5 times, the mass loss of the CVR coated sample is up to 18.21%, while the sample coated with modified coating is only 5.96%, exhibiting an obvious improvement of oxidation and thermal shock resistance of the coating. The mass loss of the modified sample is mainly contributed to the reaction of C/C substrate with oxygen diffusing through the penetrating cracks formed in thermal shock tests.展开更多
The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%-30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented...The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%-30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/Ti C-SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15% than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/Ti C-SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78 μm, was near a half of that of T,2715 μm, at 1500 °C for 20 h. Ti3SiC2/Ti C composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC-SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20% SiC added amount.展开更多
A unique SiC whisker wheel was invented,in which the whiskers were aligned normally to the grinding wheel surface.In this paper,grindabilities of the SiC whisker wheel are investigated and compared with those of other...A unique SiC whisker wheel was invented,in which the whiskers were aligned normally to the grinding wheel surface.In this paper,grindabilities of the SiC whisker wheel are investigated and compared with those of other wheels of SiC grains,Al2O3 grains,as well as Al2O3 long and short fibres which were also aligned normally to the grinding wheel surface,respectively.The main research contents concern grinding characteristics of a directionally aligned SiC whisker wheel such as material-removal volume,wheel-wear rates,integrity of the ground surfaces,grinding ratios and grinding efficiency.Furthermore,grinding wheels of whiskers and fibres have a common disadvantage:they tend to load easily.The authors have proposed a simple method of loading-free grinding to overcome this propensity and investigate some related grinding characteristics under loading-free grinding conditions.展开更多
Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from...Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1 100 ℃ at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature,investigated at different n(H2) /n(MTS) values,show that hydrogen exhibits strongly influences on the deposition rate. Especially,the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H2) /n(MTS) . SEM micrographs directly show the variation of surface morphologies at various n(H2) /n(MTS) . It can be found that the crystal grain of the deposit at 1 100 ℃ is better developed and the crystallization is also improved with increasing n(H2) /n(MTS) .展开更多
SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed ...SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.展开更多
SiC nanowires with thickness-controlled SiO2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmiss...SiC nanowires with thickness-controlled SiO2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, X-ray diffraction （XRD）, Raman spectroscopy, infrared （IR） spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol-L-1 NaOH solution for 40 min at 70 ~C. A mechanism for the removal of the SiO2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence （PL） measurement results showed that the SiC nanowires sheathed with an optimum SiO2 thickness （3.03 nm） have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO2.展开更多
基金Projects (51175444,50532010) supported by the National Natural Science Foundation of ChinaProject (2011121002) supported by the Fundamental Research Funds for the Central Universities, ChinaProject (2009J1009) supported by Scientific and Technological Innovation Platform of Fujian Province,China
文摘The yttrium as a sintering aid was introduced into polycarbosilane（PCS） to prepare yttrium-containing PCS（PYCS）.Two types of yttrium-containing SiC fibres,the SiC（OY） fibres and the SiC（Y） fibres,were fabricated with PYCS.The structural evolution and the associated properties on changing from SiC（OY） to SiC（Y） fibres during the sintering process were studied.The chemical composition of the SiC（OY） fibres is SiC1.53O0.22Y0.005 with an amorphous structure.The composition of SiC（Y） fibres is SiC1.23O0.05Y0.005.The fibres are composed of a large number of β-SiC crystallites with a size of 50 nm and a small amount of α-SiC crystalline.The tensile strength and fracture toughness of the SiC（OY） fibres are 2.25 GPa and 2.37 MPa·m1/2,respectively,and 1.61 GPa,1.91 MPa·m1/2,respectively for SiC（Y） fibres.The SiC（Y） fibres have a higher thermal stability than the SiC（OY） fibres.
基金Project(50625101) supported by the National Natural Science Fund for Distinguished Young Scholars,China Project(51071097) supported by the National Natural Science Foundation of ChinaProject(11QG67) supported by the Fundamental Research Funds for the Central Universities,China
文摘The influence of Si on the stability of TiC in Al melts was studied.It is found that TiC particles in Al melts become unstable with the addition of Si.When the melting temperature is below 890 °C,TiC will react with Al and Si to form TiAlxSiy and Al4C3 phases.But if the melt temperature is above 890 ℃,TiC will react with Al and Si to form to Ti3SiC2 and Al4C3.It is considered that the influence of Si on the stability of TiC in Al melts is due to its incursion into TiC crystal lattice during the holding,which will cause serious lattice distortion in TiC and then speed up the out-diffusion of surrounded C atoms.
文摘We present the fabrication and testing of a silicon carbide （SiC） balanced mass doublended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth. The device features a material stack that survives corrosive environments and enables high-temperature operation. To perform hightemperature testing, a specialized setup was constructed that allows the tuning fork to be characterized using traditional silicon electronics. The tuning fork has been operated at 600°C in the presence of dry steam for short durations. This tuning fork has also been tested to 64 000 G using a hard-launch, soft-catch shock implemented with a light gas gun. However, the device still has a strain sensitivity of 66 Hz/μe and strain resolution of 0. 045 μe in a 10 kHz bandwidth. As such, this balanced-mass double-ended tuning fork can be used to create a variety of different sensors including strain gauges, accelerometers, gyroscopes, and pressure transducers. Given the adaptable fabrication process flow, this device could be useful to micro-electro-mechanical systems （MEMS） designers creating sensors for a variety of different applications.
基金Project(51074193)supported by the National Natural Science Foundation of ChinaProjects(2011AA7024034,2011AA7053016)supported by the National High Technology Research and Development Program of ChinaProject(LK0903)supported by State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University,China
文摘Polycarbosilane containing beryllium(BPCS) precursors was prepared by the reaction of polycarbosilane(PCS) with beryllium acetylacetone(Be(acac)2).The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS.Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C.At 1400 °C,BPCS precursors convert into silicon carbide ceramics.The ceramization of different beryllium content precursors were studied,which show that beryllium plays an important role in the inhibition of crystalline grain growth of β-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.
基金Project(2006CB600901) supported by the National Basic Research Program of ChinaProject(50802115) supported by the National Natural Science Foundation of China
文摘To protect carbon/carbon (C/C) composites from oxidation, a SiC coating modified with SiO2 was prepared by a complex technology. The inner SiC coating with thickness varying from 150 to 300 μm was initially coated by chemical vapor reaction (CVR): a simple and cheap technique to prepare the SiC coating via siliconizing the substrate that was exposed to the mixed vapor (Si and SiO2) at high temperatures (1 923?2 273 K). Then the as-prepared coating was processed by a dipping and drying procedure with tetraethoxysilane as source materials to form SiO2 to fill the cracks and holes. Oxidation tests show that, after oxidation in air at 1 623 K for 10 h and thermal cycling between 1 623 K and room temperature 5 times, the mass loss of the CVR coated sample is up to 18.21%, while the sample coated with modified coating is only 5.96%, exhibiting an obvious improvement of oxidation and thermal shock resistance of the coating. The mass loss of the modified sample is mainly contributed to the reaction of C/C substrate with oxygen diffusing through the penetrating cracks formed in thermal shock tests.
基金Project(51302206)supported by the National Natural Science Foundation of ChinaProject(2013JK0925)supported by Shaanxi Provincial Department of Education,China+1 种基金Project(SKLSP201308)supported by the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University,ChinaProject supported by the State Scholarship Fund,China
文摘The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%-30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/Ti C-SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15% than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/Ti C-SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78 μm, was near a half of that of T,2715 μm, at 1500 °C for 20 h. Ti3SiC2/Ti C composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC-SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20% SiC added amount.
文摘A unique SiC whisker wheel was invented,in which the whiskers were aligned normally to the grinding wheel surface.In this paper,grindabilities of the SiC whisker wheel are investigated and compared with those of other wheels of SiC grains,Al2O3 grains,as well as Al2O3 long and short fibres which were also aligned normally to the grinding wheel surface,respectively.The main research contents concern grinding characteristics of a directionally aligned SiC whisker wheel such as material-removal volume,wheel-wear rates,integrity of the ground surfaces,grinding ratios and grinding efficiency.Furthermore,grinding wheels of whiskers and fibres have a common disadvantage:they tend to load easily.The authors have proposed a simple method of loading-free grinding to overcome this propensity and investigate some related grinding characteristics under loading-free grinding conditions.
基金Project supported by the One Hundred Talents Program of Chinese Academy of Sciences
文摘Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1 100 ℃ at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature,investigated at different n(H2) /n(MTS) values,show that hydrogen exhibits strongly influences on the deposition rate. Especially,the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H2) /n(MTS) . SEM micrographs directly show the variation of surface morphologies at various n(H2) /n(MTS) . It can be found that the crystal grain of the deposit at 1 100 ℃ is better developed and the crystallization is also improved with increasing n(H2) /n(MTS) .
文摘SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.
基金The work reported here was supported by the National Natural Science Foundation of China under Grant Nos. 51272117, 51172115, and 50972063, the Natural Science Foundation of Shandong Province under Grant Nos. ZR2011EMZ001, and ZR2011EMQ011, the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No. 20123719110003, the Application Foundation Research Program of Qingdao under Grant No. 13-1-4- 117-jch, and the Tackling Key Program of Science and Technology in Shandong Province under Grant No. 2012GGX10218. We express our grateful thanks to them for their financial support.
文摘SiC nanowires with thickness-controlled SiO2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, X-ray diffraction （XRD）, Raman spectroscopy, infrared （IR） spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol-L-1 NaOH solution for 40 min at 70 ~C. A mechanism for the removal of the SiO2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence （PL） measurement results showed that the SiC nanowires sheathed with an optimum SiO2 thickness （3.03 nm） have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO2.
