A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by th...A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.展开更多
Both acrylate based polymer and silicone resin are proposed as recoating materials surrounding LPFGs for purposes of different applications. For the LPFG recoated with a thin layer of acrylate based polymer, the range...Both acrylate based polymer and silicone resin are proposed as recoating materials surrounding LPFGs for purposes of different applications. For the LPFG recoated with a thin layer of acrylate based polymer, the range of wavelength shift as much as 60nm is expected when temperature changes from 0～100℃. As for that with surrounding material of silicone resin, the temperature stability is greatly improved depicted as the maximum wavelength shift of about 0.6nm with the same temperature variation. The former is potentially a broadband tunable band rejection filter or temperature sensor with enhanced sensitivity. And the latter could be applied as temperature insensitive filter, demultiplexer or strain sensor.展开更多
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wi...A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.展开更多
A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared ab...A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.展开更多
Inline characterization for fabrication of silicon wafer PV （photovoltaic） devices may be used to optimize device efficiencies, reduce their performance variance, and their cost of production. In this article, the f...Inline characterization for fabrication of silicon wafer PV （photovoltaic） devices may be used to optimize device efficiencies, reduce their performance variance, and their cost of production. In this article, the frozen in strain from a variety of extended defects in silicon is shown to effect the polarization of light transmitted through a silicon substrate due to the photo-elastic effect. Transmission polarimetry on pre-fabricated silicon substrates may be used for identification of extended defects in the materials using a polarization analysis instrument. Instrumentation is proposed for detection of defects in raw silicon wafers for applications like raw silicon wafer sorting, scanning silicon bricks, and inline inspection prior to solar cell metallization. Such analysis may assist with gettering of silicon solar cells, may be implemented in the sorting and rejection procedures in PV device fabrication, and in general shows advantages for detection of defects in silicon wafer solar cell materials and devices.展开更多
Subwavelength grating(SWG) waveguides in silicon-on-insulator are emerging as an enabling technology for implementing compact, high-performance photonic integrated devices and circuits for signal processing and sensin...Subwavelength grating(SWG) waveguides in silicon-on-insulator are emerging as an enabling technology for implementing compact, high-performance photonic integrated devices and circuits for signal processing and sensing applications. We provide an overview of our recent work on developing wavelength selective SWG waveguide filters based on Bragg gratings and ring resonators, as well as optical delay lines. These components increase the SWG waveguide component toolbox and can be used to realize more complex photonic integrated circuits with enhanced or new functionality.展开更多
文摘A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
文摘Both acrylate based polymer and silicone resin are proposed as recoating materials surrounding LPFGs for purposes of different applications. For the LPFG recoated with a thin layer of acrylate based polymer, the range of wavelength shift as much as 60nm is expected when temperature changes from 0～100℃. As for that with surrounding material of silicone resin, the temperature stability is greatly improved depicted as the maximum wavelength shift of about 0.6nm with the same temperature variation. The former is potentially a broadband tunable band rejection filter or temperature sensor with enhanced sensitivity. And the latter could be applied as temperature insensitive filter, demultiplexer or strain sensor.
基金This work is supported by the National Natural Science Founda-tion of China (No. 60536030) the National High TechnologyResearch and Development Program of China (No.2005AA311030)
文摘A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
文摘A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.
文摘Inline characterization for fabrication of silicon wafer PV （photovoltaic） devices may be used to optimize device efficiencies, reduce their performance variance, and their cost of production. In this article, the frozen in strain from a variety of extended defects in silicon is shown to effect the polarization of light transmitted through a silicon substrate due to the photo-elastic effect. Transmission polarimetry on pre-fabricated silicon substrates may be used for identification of extended defects in the materials using a polarization analysis instrument. Instrumentation is proposed for detection of defects in raw silicon wafers for applications like raw silicon wafer sorting, scanning silicon bricks, and inline inspection prior to solar cell metallization. Such analysis may assist with gettering of silicon solar cells, may be implemented in the sorting and rejection procedures in PV device fabrication, and in general shows advantages for detection of defects in silicon wafer solar cell materials and devices.
基金supported in part by the NSERC NGON and Si EPIC CREATE programs,NSERC SPG,and the Royal Society International Exchanges Scheme 2012/R2
文摘Subwavelength grating(SWG) waveguides in silicon-on-insulator are emerging as an enabling technology for implementing compact, high-performance photonic integrated devices and circuits for signal processing and sensing applications. We provide an overview of our recent work on developing wavelength selective SWG waveguide filters based on Bragg gratings and ring resonators, as well as optical delay lines. These components increase the SWG waveguide component toolbox and can be used to realize more complex photonic integrated circuits with enhanced or new functionality.
