期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
硅紫外光敏管设计研究 被引量:2
1
作者 胡东红 《光电子技术》 CAS 1993年第1期50-54,共5页
本文讨论了光吸收系数、掺杂浓度、掺杂浓度分布、表面反射等各种因素对硅光敏管紫外响应的影响。提出了制作硅紫外光敏管的设计原则:浅结、低掺杂、高表面浓度梯度和 SiO_2层满足消反射条件。并具体分析了一个实例。
关键词 硅光敏管 敏器件 电器件 设计
下载PDF
Silicon Photodiode with Very Small Sensitive Area
2
作者 ① YIN Changsong,LI Xiaojun (Wuhan University,Wuhan 430072,CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第4期289-292,共4页
The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhi... The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the PN junction photodiode with very small sensitive area. 展开更多
关键词 PHOTODIODE Photoelectric Conversion PN Junction
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部