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硅光电检测器响应时间快
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《电子元器件应用》 2003年第8期64-64,共1页
关键词 重庆航伟光电有限公司 GTl01系列 硅光电检测器 响应时间
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热辐射传感器相关的普朗克积分解
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作者 陈利霞 卢文全 丁宣浩 《激光与红外》 CAS CSCD 北大核心 2003年第6期440-442,共3页
文章提出了普朗克积分在普遍情况下的表达形式。给出了考虑到光纤传输函数和硅 光电检测器的光谱响应特性后普朗克积分的数值解,其结果与文献的实验较为一致。文末还讨论了在求解普遍情况下的普朗克积分时应该注意的几个问题。
关键词 热辐射传感器 普朗克积分 光纤传输函数 -光电检测器 数值解
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Design of Photoelectric Detection Circuit in Linear Measuring System 被引量:2
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作者 LUOSenlin GUOZhengqiang 《Semiconductor Photonics and Technology》 CAS 1998年第3期153-158,共6页
The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and... The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and under an operation state of output short-circuit.We must let the operation amplifier work in the current-voltage transfer form.Also we analyzed the effects of the input noise voltage,the input noise current,the input offset voltage,the input offset current of the operation amplifier and the noises of the silicon photodiode on the combined circuit of the operation amplifier with the silicon photodiode.Considering these factors,we can design the detective circuit with high response,sensitivity,stability,linearity and SNR . 展开更多
关键词 Operation Amplifier Signal Noise Ratio Silicon Photodiode
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Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array
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作者 CAO Jun-kai (Chongqing Optoelectronics Research Institute, Chongqing 400060,CHN) 《Semiconductor Photonics and Technology》 CAS 2000年第1期29-33,共5页
The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the... The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the deduction is tested and verified. 展开更多
关键词 Si-photodiode Detector arrays CROSSTALK
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