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镶片硬质合金横剪刀的研制
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作者 姜松延 《电工专用设备》 1991年第2期16-22,共7页
关键词 剪切刀具 硬质合金 硅刚片 变压器
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A Diamond Electrochemical Cleaning Technique for Organic Contaminants on Silicon Wafer Surfaces 被引量:2
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作者 张建新 刘玉岭 +4 位作者 檀柏梅 牛新环 边永超 高宝红 黄妍妍 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期473-477,共5页
Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied dur... Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique (DECT). The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique. 展开更多
关键词 organic contaminations silicon wafer surface cleaning boron-doped diamond electrodes powerful oxidant micro-roughness electrochemical cleaning
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A model for nanogrinding based on direct evidence of ground chips of silicon wafers 被引量:6
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作者 ZHANG ZhenYu HUO YanXia GUO DongMing 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第9期2099-2108,共10页
Nanometer chips were directly fabricated using face nanogrinding carried out by ultrafine diamond grits at room temperature. Direct evidence for ground nanometer chips is cuboid, and the average ratio of width to thic... Nanometer chips were directly fabricated using face nanogrinding carried out by ultrafine diamond grits at room temperature. Direct evidence for ground nanometer chips is cuboid, and the average ratio of width to thickness is 1.49. Chips of 9.0 nm in thickness, 13.3 nm in width, and 16.0 in diagonal were achieved and confirmed using transmission electron microscopy. Based on the nanometer chips observed, a model was proposed according to the mass conservation and fundamental mechanism of face grinding. The surface roughness and thickness of damaged layers measured experimentally are in good agreement with the prediction of the developed model. The feed rate significantly affects the surface roughness and thickness of damaged layers, when keeping the wheel and table speeds constant, respectively. 展开更多
关键词 nanometer chip nanogrinding surface roughness si wafer TEM
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