The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation ...The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.展开更多
文摘The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.
