A novel treatment process of lead anode slime bearing high antimony and low silver was developed by a potential-controlled chloridization leaching and continuous distillation.The experimental results show a high Sb 3+...A novel treatment process of lead anode slime bearing high antimony and low silver was developed by a potential-controlled chloridization leaching and continuous distillation.The experimental results show a high Sb 3+ concentration,489.2 g/L,in the leaching solution for two-stage countercurrent leaching process,and the leaching rates of Sb,Cu,Bi more than 99% when the potential is controlled at 450 mV.When the leaching solution is distillated and concentrated at 120°C,almost all the silicon compound is evaporated into the concentration distillate and exists as amorphous hydrated silica.By the continuous distillation,high pure SbCl3 could be prepared,and AsCl3 is enriched in the distillate while metals Bi,Cu are enriched in the continuous distillation residue.As a result,the recovery rate of Sb is more than 95%.展开更多
Y2000-62135-152 0020165高纵横比175nm 技术用低再沉淀速率高密度等离子体 CVD 工艺=A low redeposition rate high density plas-ma CVD process for high aspect ratio 175nm technologyand beyond[会,英]/Lee,G.Y.& Ivers,T.H./...Y2000-62135-152 0020165高纵横比175nm 技术用低再沉淀速率高密度等离子体 CVD 工艺=A low redeposition rate high density plas-ma CVD process for high aspect ratio 175nm technologyand beyond[会,英]/Lee,G.Y.& Ivers,T.H.//1999 IEEE Proceedizips of International InterconnectTechnology Conference.-152～154(EC)展开更多
基金Project(2006BAB02B04-4-1)supported by the National Science and Technology Pillar Program during the 11th Five-Year Plan Period,China
文摘A novel treatment process of lead anode slime bearing high antimony and low silver was developed by a potential-controlled chloridization leaching and continuous distillation.The experimental results show a high Sb 3+ concentration,489.2 g/L,in the leaching solution for two-stage countercurrent leaching process,and the leaching rates of Sb,Cu,Bi more than 99% when the potential is controlled at 450 mV.When the leaching solution is distillated and concentrated at 120°C,almost all the silicon compound is evaporated into the concentration distillate and exists as amorphous hydrated silica.By the continuous distillation,high pure SbCl3 could be prepared,and AsCl3 is enriched in the distillate while metals Bi,Cu are enriched in the continuous distillation residue.As a result,the recovery rate of Sb is more than 95%.
文摘Y2000-62135-152 0020165高纵横比175nm 技术用低再沉淀速率高密度等离子体 CVD 工艺=A low redeposition rate high density plas-ma CVD process for high aspect ratio 175nm technologyand beyond[会,英]/Lee,G.Y.& Ivers,T.H.//1999 IEEE Proceedizips of International InterconnectTechnology Conference.-152～154(EC)
