Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of ...Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.展开更多
The effect of nickel contamination under rapid thermal processing （RTP） on the magic denuded zone （MDZ） in Czochralski silicon is investigated. It is found that the bulk defects can effectively getter nickel atoms...The effect of nickel contamination under rapid thermal processing （RTP） on the magic denuded zone （MDZ） in Czochralski silicon is investigated. It is found that the bulk defects can effectively getter nickel atoms once the MDZ forms. However,if the silicon sample is initially contaminated with nickel, the MDZ cannot form during the subsequent RTP,and a high density of precipitates occurs near the surface. In conventional IG processes,the DZ can form regardless of the nickel contamination sequence. Based on the facts,we propose that the formation of nickel silicide （Ni3Si） at the surface keeps the concentration of vacancies in the near-surface zone still higher than the critical concentration for oxygen precipitation under the subsequent RTP, which prevents MDZ formation.展开更多
文摘Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.
文摘The effect of nickel contamination under rapid thermal processing （RTP） on the magic denuded zone （MDZ） in Czochralski silicon is investigated. It is found that the bulk defects can effectively getter nickel atoms once the MDZ forms. However,if the silicon sample is initially contaminated with nickel, the MDZ cannot form during the subsequent RTP,and a high density of precipitates occurs near the surface. In conventional IG processes,the DZ can form regardless of the nickel contamination sequence. Based on the facts,we propose that the formation of nickel silicide （Ni3Si） at the surface keeps the concentration of vacancies in the near-surface zone still higher than the critical concentration for oxygen precipitation under the subsequent RTP, which prevents MDZ formation.
