高亮度硅纳米晶发光峰位的调制

镶嵌硅纳米晶的SiO_(2)薄膜(Si-nc∶SiO_(2))是目前主要的硅发光材料。Si-nc发光强度低的缺点阻碍了它的应用,因此寻求一种制备高亮度Si-nc∶SiO_(2)的方法尤为重要。使用氢硅倍半环氧乙烷(HSQ)热退火方法制备高亮度的Si-nc∶SiO_(2),通过控制腐蚀时间改变Si-nc的粒径和发光峰位。采用透射电子显微镜、X射线衍射、光致发光和拉曼光谱等表征Si-nc∶SiO_(2)的结构和性能。将HSQ热退火方法制备的Si-nc∶SiO_(2)样品与蒸镀方法制备的Si-nc∶SiO_(2)进行比较,得出采用HSQ热退火方法制备的Si-nc∶SiO_(2)样品的性能远高于采用蒸镀方法制备的样品的性能,最终获得了发光波长为570 nm(黄光)、610 nm(橙光)和730 nm(红光)的Si-nc∶SiO_(2)。

Nano-indentation profiles of intrinsic hardness and modulus of films based on silsesquioxane modified with titanium tetrabutoxide

This study is to analyze the influence of the modifier, 5～25 wt % titanium tetrabutoxide (TBO), on the hardness and elastic modulus of the films based on SSO deriving from hydrolytic condensation of (3-glycidoxypropyl)trimethoxysilane (GPMS) and vinyltrimethoxysilane (VMS), by the continuous stiffness measurement (CSM) technique of an instrumented-indentation testing (IIT) device. Films were synthesized by adding the stoichiometric amount of ethylenediamine (EDA) and benzoyl proxide (BPO) to SSO solutions in ethanol, dip-coating over glass substrates, and curing using an appropriate thermal cycle. Intrinsic values of hardness and elastic modulus were determined with the average values in “plateau region” from “four-layer” explanation. And the brittle index of the modified coating systems was analyzed.