A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by th...A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.展开更多
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wi...A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.展开更多
文摘A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
基金This work is supported by the National Natural Science Founda-tion of China (No. 60536030) the National High TechnologyResearch and Development Program of China (No.2005AA311030)
文摘A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
