硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限...硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限制,发挥新兴材料的优势,体现光电子集成在后摩尔时代高效化信息处理方面的优势。硅基光互连的实现需要依托于与当前集成电路制造工艺兼容的高效硅基片上光源。概述了后摩尔时代硅基片上光源的研究进展与面临的困难,重点介绍了本研究组在硅量子点(quantum dot,QD)光源、硅锗基光源、硅基应变锗光源等方面的研究进展。展开更多
Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is sh...Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.展开更多
文摘硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限制,发挥新兴材料的优势,体现光电子集成在后摩尔时代高效化信息处理方面的优势。硅基光互连的实现需要依托于与当前集成电路制造工艺兼容的高效硅基片上光源。概述了后摩尔时代硅基片上光源的研究进展与面临的困难,重点介绍了本研究组在硅量子点(quantum dot,QD)光源、硅锗基光源、硅基应变锗光源等方面的研究进展。
文摘Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.
