The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si ...The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.展开更多
Photodiode＇s reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufac...Photodiode＇s reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufacturer and batch and how the reflectance of three standard photodiodes has drifted during six years. The results show that the reflectance changes from diode to diode within the same batch and also show that the reflectance ofphotodiodes changes on time. This ageing is spectraUy dependent.展开更多
Y99-61799-365 0007491场发射阵列的技术与材料=Field emitter arrays tech-nologies and materials[会,英]/Kleps,I.& Banoiu,G.//Proceedings of 1998 International SemiconductorConference,Vol.2.—365～368(UG)利用不同的微...Y99-61799-365 0007491场发射阵列的技术与材料=Field emitter arrays tech-nologies and materials[会,英]/Kleps,I.& Banoiu,G.//Proceedings of 1998 International SemiconductorConference,Vol.2.—365～368(UG)利用不同的微加工技术已加工出具有各种图形特点的硅发射阵列。其发射极的几何形状能利用变化其技术参数(腐蚀率,选择性和表面形貌)进行修正。为改进其场发射特性,还能用各种材料对硅发射极进行包敷。展开更多
Eu2+ -activated reddish-orange-emitting Ca3Si2O7 phosphors were synthesized with the addition of NH4Cl flux.When the phosphors were synthesized in a nominal composition of (Ca0.99Eu0.01)3Si2O7 without flux addition,a ...Eu2+ -activated reddish-orange-emitting Ca3Si2O7 phosphors were synthesized with the addition of NH4Cl flux.When the phosphors were synthesized in a nominal composition of (Ca0.99Eu0.01)3Si2O7 without flux addition,a Ca3Si2O7 phase responsible for reddish-orange emission was identified to coexist with an intermediate phase of a-Ca2SiO4 for green emission.With the addition of NH4Cl flux,a-Ca2SiO4 was suppressed while the pure phase Ca3Si2O7 was obtained as the flux content was 3 wt%.Through varying the amount of flux,the emission color of samples can be tuned from green to reddish-orange,corresponding to the phase transformation from a-Ca2SiO4 to Ca3Si2O7.Through optimizing the doping concentration of Eu2+ ,the optimized photoluminescence (PL) properties for reddish-orange emission can be achieved,which makes this kind of phosphor prospective in the applications of the phosphor-converted white light emitting diodes (PC-WLEDs).展开更多
文摘The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.
文摘Photodiode＇s reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufacturer and batch and how the reflectance of three standard photodiodes has drifted during six years. The results show that the reflectance changes from diode to diode within the same batch and also show that the reflectance ofphotodiodes changes on time. This ageing is spectraUy dependent.
文摘Y99-61799-365 0007491场发射阵列的技术与材料=Field emitter arrays tech-nologies and materials[会,英]/Kleps,I.& Banoiu,G.//Proceedings of 1998 International SemiconductorConference,Vol.2.—365～368(UG)利用不同的微加工技术已加工出具有各种图形特点的硅发射阵列。其发射极的几何形状能利用变化其技术参数(腐蚀率,选择性和表面形貌)进行修正。为改进其场发射特性,还能用各种材料对硅发射极进行包敷。
基金supported by the National Natural Science Foundation of China (Nos.50872091,21076161 and 50802062)the Tianjin Municipal Science/Technology Commission (Nos.10SYSYJC28100 and 2006ZD30)the Tianjin Municipal Higher Education Commission (No.20110304)
文摘Eu2+ -activated reddish-orange-emitting Ca3Si2O7 phosphors were synthesized with the addition of NH4Cl flux.When the phosphors were synthesized in a nominal composition of (Ca0.99Eu0.01)3Si2O7 without flux addition,a Ca3Si2O7 phase responsible for reddish-orange emission was identified to coexist with an intermediate phase of a-Ca2SiO4 for green emission.With the addition of NH4Cl flux,a-Ca2SiO4 was suppressed while the pure phase Ca3Si2O7 was obtained as the flux content was 3 wt%.Through varying the amount of flux,the emission color of samples can be tuned from green to reddish-orange,corresponding to the phase transformation from a-Ca2SiO4 to Ca3Si2O7.Through optimizing the doping concentration of Eu2+ ,the optimized photoluminescence (PL) properties for reddish-orange emission can be achieved,which makes this kind of phosphor prospective in the applications of the phosphor-converted white light emitting diodes (PC-WLEDs).
