The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si ...The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.展开更多
SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed ...SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.展开更多
In this work, indium nitride(InN) films were successfully grown on porous silicon(PS) using metal oxide chemical vapor deposition(MOCVD) method. Room temperature photoluminescence(PL) and field emission scanning elect...In this work, indium nitride(InN) films were successfully grown on porous silicon(PS) using metal oxide chemical vapor deposition(MOCVD) method. Room temperature photoluminescence(PL) and field emission scanning electron microscopy(FESEM) analyses are performed to investigate the optical, structural and morphological properties of the InN/PS nanocomposites. FESEM images show that the pore size of InN/PS nanocomposites is usually less than 4 μm in diameter, and the overall thickness is approximately 40 μm. The InN nanoparticles penetrate uniformly into PS layer and adhere to them very well. Nitrogen(N) and indium(In) can be detected by energy dispersive spectrometer(EDS). An important gradual decrease of the PL intensity for PS occurs with the increase of oxidation time, and the PL intensity of PS is quenched after 24 h oxidization. However, there is a strong PL intensity of InN/PS nanocomposites at 430 nm(2.88 eV), which means that PS substrate can influence the structural and optical properties of the InN, and the grown InN on PS substrate has good optical quality.展开更多
CdS nanocrystals have been successfully grown on porous silicon(PS) by sol-gel method. The plan-view field emission scanning electron microscopy(FESEM) shows that the pore size of PS is smaller than 5 μm in diameter ...CdS nanocrystals have been successfully grown on porous silicon(PS) by sol-gel method. The plan-view field emission scanning electron microscopy(FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of Cd S are broadly distributed on the surface of PS substrate. With the increase of annealing time, the Cd S nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of Zn O/PS show that Cd S nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence(PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of Cd S/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.展开更多
文摘The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.
文摘SiC composite membrane was fabricated by mixing with SiC and ZnO powder. This mixture was pressed and sintered at 1,300 ℃ under air condition. This sintered ZnO-SiC membrane was dip-coated by silica sol and followed by heat-treatment. This membrane was characterized by XRD （X-ray diffraction）, FE-SEM （field emission scanning electron microscopy） and BET （Brunauer-Emmett-Teller） instruments. Hydrogen permeation test was conducted at 0.1 MPa pressure and also variation of temperatures. The obtained value of heat-treated membrane after dip-coating at 298 K was obtained as 1.61 × 10-6 mol/（m2·s·Pa）.
基金supported by the Xinjiang Science and Technology Project(No.2015211C275)
文摘In this work, indium nitride(InN) films were successfully grown on porous silicon(PS) using metal oxide chemical vapor deposition(MOCVD) method. Room temperature photoluminescence(PL) and field emission scanning electron microscopy(FESEM) analyses are performed to investigate the optical, structural and morphological properties of the InN/PS nanocomposites. FESEM images show that the pore size of InN/PS nanocomposites is usually less than 4 μm in diameter, and the overall thickness is approximately 40 μm. The InN nanoparticles penetrate uniformly into PS layer and adhere to them very well. Nitrogen(N) and indium(In) can be detected by energy dispersive spectrometer(EDS). An important gradual decrease of the PL intensity for PS occurs with the increase of oxidation time, and the PL intensity of PS is quenched after 24 h oxidization. However, there is a strong PL intensity of InN/PS nanocomposites at 430 nm(2.88 eV), which means that PS substrate can influence the structural and optical properties of the InN, and the grown InN on PS substrate has good optical quality.
基金supported by the Xinjiang Science and Technology Project(No.2015211C275)
文摘CdS nanocrystals have been successfully grown on porous silicon(PS) by sol-gel method. The plan-view field emission scanning electron microscopy(FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of Cd S are broadly distributed on the surface of PS substrate. With the increase of annealing time, the Cd S nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of Zn O/PS show that Cd S nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence(PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of Cd S/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.
