The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum pass...The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.展开更多
Because crystalline silicon thin film （CSiTF） solar cells possess the advantages of crystalline silicon solar cells such as high ef- ficiency and stable performance and those of thin film solar cells such as low cos...Because crystalline silicon thin film （CSiTF） solar cells possess the advantages of crystalline silicon solar cells such as high ef- ficiency and stable performance and those of thin film solar cells such as low cost and so on, it is regarded as the next genera- tion solar cell technology, which is most likely to replace the existing crystalline silicon solar cell technology. In this paper, we performed device simulation on the epitaxial CSiTF solar cell by using PCI D software. In order to make simulation results closer to the actual situation, we adopted a more realistic device structure and parameters. On this basis, we comprehensively and systematically investigated the effect of physical parameters of back surface field （BSF） layer, base and emitter, electrical quality of crystalline silicon active layer, situation of surface passivation, internal recombination and p-n junction leakage on the optoelectronic performance of the epitaxial CSiTF solar cell. Among various factors affecting the efficiency of the epitaxial CSiTF solar cell, we identified the three largest efficiency-affecting parameters. They are the base minority carrier diffusion length, the diode dark saturation current and the front surface recombination velocity in order. Through simulations, we found that the base is not the thicker the better, and the base minority carrier diffusion length must be taken into account when deter- mining the optimal base thickness. When the base minority carrier diffusion length is smaller, the optimal base thickness should be less than or equal to the base minority carrier diffusion length; when the base minority carrier diffusion length is larger, the base minority carrier diffusion length should be at least twice the optimal base thickness. In addition, this paper not only illustrates the simulation results but also explains their changes from the aspect of physical mechanisms. Because epitaxi- al CSiTF solar cells possess a device structure that is similar to crystalline silicon solar cells, the conclusions drawn in this pa- per are also applied to crystalline silicon solar cells to a certain extent, particularly to thin silicon solar cells which are the hot- test research topic at present.展开更多
In this paper, we tion （SHJ） solar cells with prepared silicon heterojunc- the structure of p-c-Si/i-a- SiOx：H/n-μc-SiOx：H （a-SiOx：H, oxygen rich amorphous silicon oxide; μc-SiOx：H, microcrystalline silicon o...In this paper, we tion （SHJ） solar cells with prepared silicon heterojunc- the structure of p-c-Si/i-a- SiOx：H/n-μc-SiOx：H （a-SiOx：H, oxygen rich amorphous silicon oxide; μc-SiOx：H, microcrystalline silicon oxide） by plasma-enhanced chemical vapor deposition method. The influence of the n-μc-SiOx：H emitter thickness on the heterointerface passivation in SHJ solar cells was investi- gated. With increasing thickness, the crystallinity of the emitter as well as its dark conductivity increases. Mean- while, the effective minority carrier lifetime （teff） of the SHJ solar cell precursors at low injection level shows a pronounced increase trend, implying that an improved field effect passivation is introduced as the emitter is deposited. And, an increased μTelf is also observed at entire injection level due to the interfacial chemical passivation improved by the hydrogen diffusion along with the emitter deposition. Based on the analysis on the external quantum effi- ciency of the SHJ solar cells, it can be expected that the high efficient SHJ solar cells could be obtained by improving the heterointerface passivation and optimizing the emitter deposition process.展开更多
文摘The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.
基金supported by the National Natural Science Foundation of China (Grant No. 50802118)Science & Technology Research Project of Guangdong Province (Grant Nos. 2011A032304001,2010B090400020)the Fundamental Research Funds for the Central Universities (Grant No. 2011300003161469)
文摘Because crystalline silicon thin film （CSiTF） solar cells possess the advantages of crystalline silicon solar cells such as high ef- ficiency and stable performance and those of thin film solar cells such as low cost and so on, it is regarded as the next genera- tion solar cell technology, which is most likely to replace the existing crystalline silicon solar cell technology. In this paper, we performed device simulation on the epitaxial CSiTF solar cell by using PCI D software. In order to make simulation results closer to the actual situation, we adopted a more realistic device structure and parameters. On this basis, we comprehensively and systematically investigated the effect of physical parameters of back surface field （BSF） layer, base and emitter, electrical quality of crystalline silicon active layer, situation of surface passivation, internal recombination and p-n junction leakage on the optoelectronic performance of the epitaxial CSiTF solar cell. Among various factors affecting the efficiency of the epitaxial CSiTF solar cell, we identified the three largest efficiency-affecting parameters. They are the base minority carrier diffusion length, the diode dark saturation current and the front surface recombination velocity in order. Through simulations, we found that the base is not the thicker the better, and the base minority carrier diffusion length must be taken into account when deter- mining the optimal base thickness. When the base minority carrier diffusion length is smaller, the optimal base thickness should be less than or equal to the base minority carrier diffusion length; when the base minority carrier diffusion length is larger, the base minority carrier diffusion length should be at least twice the optimal base thickness. In addition, this paper not only illustrates the simulation results but also explains their changes from the aspect of physical mechanisms. Because epitaxi- al CSiTF solar cells possess a device structure that is similar to crystalline silicon solar cells, the conclusions drawn in this pa- per are also applied to crystalline silicon solar cells to a certain extent, particularly to thin silicon solar cells which are the hot- test research topic at present.
文摘In this paper, we tion （SHJ） solar cells with prepared silicon heterojunc- the structure of p-c-Si/i-a- SiOx：H/n-μc-SiOx：H （a-SiOx：H, oxygen rich amorphous silicon oxide; μc-SiOx：H, microcrystalline silicon oxide） by plasma-enhanced chemical vapor deposition method. The influence of the n-μc-SiOx：H emitter thickness on the heterointerface passivation in SHJ solar cells was investi- gated. With increasing thickness, the crystallinity of the emitter as well as its dark conductivity increases. Mean- while, the effective minority carrier lifetime （teff） of the SHJ solar cell precursors at low injection level shows a pronounced increase trend, implying that an improved field effect passivation is introduced as the emitter is deposited. And, an increased μTelf is also observed at entire injection level due to the interfacial chemical passivation improved by the hydrogen diffusion along with the emitter deposition. Based on the analysis on the external quantum effi- ciency of the SHJ solar cells, it can be expected that the high efficient SHJ solar cells could be obtained by improving the heterointerface passivation and optimizing the emitter deposition process.
