Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe...Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.展开更多
By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrica...By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.展开更多
基金National Key R&D Program of China(2021YFA0716304)Shanghai Science and Technology Programs(22511100300,23DZ2201500)。
文摘Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.
文摘By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.
