A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring...A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring the charge-to-mass ratio of gas molecules. Structures of silicon beam resonators are designed, simulated, and optimized. This gas sensor is fabricated using sacrificial layer microelectronmechanical system technology, and the resonant frequency of the microbeam is measured.展开更多
By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrica...By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.展开更多
文摘A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring the charge-to-mass ratio of gas molecules. Structures of silicon beam resonators are designed, simulated, and optimized. This gas sensor is fabricated using sacrificial layer microelectronmechanical system technology, and the resonant frequency of the microbeam is measured.
文摘By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.
