掺磷氢化纳晶硅薄膜的晶粒尺寸和晶格畸变的研究

采用等离子增强化学气相沉积在玻璃衬底上制备了掺磷氢化纳晶硅薄膜,并利用X射线衍射谱(XRD)和拉曼散射谱研究了PH3浓度(GFR=[PH3]/[Si H4])对薄膜平均晶粒尺寸和晶格畸变的影响.结果显示磷弱掺杂有利于晶化,而重掺杂抑制晶化.随着GFR的增大,Si(111)方向上的平均晶粒尺寸呈现出先减小后增大的趋势,而对应的晶格畸变则呈现了相反的变化趋势,小的晶粒尺寸诱导了大的晶格畸变.该结果可归结于与平均晶粒尺寸相关的表面增强效应.在掺磷氢化纳晶硅薄膜的制备过程中,PH起了关键的有效掺杂作用.

灯丝温度对热丝CVD法制备p型氢化纳米晶硅薄膜微结构与光电性能的影响

本文采用热丝化学气相沉积法在不同灯丝温度(1650～1850℃)下沉积了p型氢化纳米晶硅薄膜,研究了灯丝温度对薄膜微结构、光学性能及电学性能的影响。结果表明,随着灯丝温度的升高,薄膜的晶化率先增大后略微减小,最大值是55.5%。载流子浓度和霍尔迁移率先分别从5×1017cm-3和0.27 cm2/V.s增加到1.32×1020cm-3和0.43 cm2/V.s后略微减小,同时电导率从0.02 S/cm显著增加到8.95 S/cm,而电导激活能则从271.5 meV急剧减小至25 meV。

n型氢化纳米晶硅薄膜在柔性钙钛矿太阳电池中的应用

柔性钙钛矿太阳电池电子传输层的低温制备工艺是影响其光电转换效率和大规模应用的关键因素。将n型氢化纳米晶硅薄膜作为柔性钙钛矿太阳电池电子传输层,研究射频功率、掺杂浓度等制备参数对薄膜性能的影响,得到暗电导率、光透过率、表面形貌适用于柔性钙钛矿太阳电池电子传输层的n型氢化纳米晶硅薄膜低温制备条件。经过界面优化处理的柔性钙钛矿太阳电池转换效率达到14.66%,推动了柔性钙钛矿太阳电池的发展,为制备高性能的柔性钙钛矿太阳电池提供了新的研究思路和方法。

金属Ta缓冲层上生长微晶Si薄膜的结晶性研究

利用射频磁控溅射技术,在生长了Ta缓冲层的石英玻璃衬底上采用不同溅射功率下制备了一系列的硅薄膜样品,用拉曼光谱和X射线衍射表征了薄膜的结晶性随溅射功率的变化情况。实验结果表明:随着溅射功率的增加,薄膜逐渐由非晶向微晶过渡,晶粒沿Si(311)面呈柱状生长,功率升高到80W时薄膜的晶化率达到75.4%,薄膜为典型的微晶结构。继续增加功率,薄膜的结晶性变差,晶化率下降,在60～120W之间存在一个优化理想的射频溅射功率,在此功率下生长的薄膜样品的结晶性最高。本文还尝试解释了Ta缓冲层在Si晶化过程中的作用。

纳米晶硅薄膜中氢含量及键合模式的红外分析

采用传统射频等离子体化学气相沉积技术在100—350℃的衬底温度下高速沉积氢化硅薄膜.傅里叶变换红外光谱和Raman谱的研究表明,纳米晶硅薄膜中的氢含量和硅氢键合模式与薄膜的晶化特性有密切关系,当薄膜从非晶相向晶相转变时,氢的含量减少了一半以上,硅氢键合模式以SiH2为主.随着衬底温度的升高和晶化率的增加,纳米晶硅薄膜中氢的含量以及其结构因子逐渐减少.

Nanogrinding of SiC wafers with high flatness and low subsurface damage

Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.

Determination of Structure and Polarity of Si C Single Crystal by X-Ray Diffraction Technique

Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.

Reaction behavior of ferric oxide in system Fe_2O_3-SiO_2-Al_2O_3 during reductive sintering process

Pure compounds and kaolin were employed to investigate the reaction behavior of ferric oxide in thetrinarysystem Fe2O3?SiO2?Al2O3 during reductive sintering process. The thermodynamic analyses and reductive sintering experimental results show that ferrous oxide generated from the reduction of ferric oxide by carbon can react with silicon dioxide and aluminum oxide to form ferrous silicate and hercynite at 1173 K, respectively. In the trinary system Fe2O3?SiO2?Al2O3, ferrous oxide obtained from ferric oxide reduction preferentially reacts with aluminum oxide to form hercynite, and the reaction of ferrous oxide with silicon dioxide occurs only when there is surplus ferrous oxide after the exhaustion of aluminum oxide. When sintering temperature rises to 1473 K, hercynite further reacts with silicon dioxide to form mullite and ferrous oxide. Results presented in this work may throw a new light upon the separation of alumina and silica present in Al/Fe-bearing materials with low mass ratio of alumina to silica in alumina production.

Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD

The hydrogen plasma degradation of transparent conduction oxides （TCO） is studied for hydrogenated microcrystalline Si（μc-Si：H）prepared by plasma enhanced chemical vapor deposition （PECVD）. TCO films such as SnO2 and SnO2/ZnO bi-layer films were exposed to atomic H at various substrate temperatures and for various treatment times. A decrease in the transmittance due to reduction by atomic H was scarcely observed for SnO2 / ZnO bi-layer,while a decrease for SnO2 was found to depend strongly on the substrate temperature. The resistivity of SnO2 films decreases significantly when substrate temperature exceeds 150℃in H-plasma. However, H-plasma treatment has little impact on the resistivity of SnO2/ZnO bi-layer film. The reason for the decrease in the transmittance is the appearance of metallic Sn on the surface, and under this condition no μc-Si： H film is deposited. SnO2/ZnO bi-layer is very effective for the suppression of the reduction of TCO during μc-Si：H deposition. The performance of microcrystalline silicon solar cells fabricated on ZnO/SnO2/glass is also investigated.

Low Voltage Class C SiGe Microwave Power HBTs

The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.

Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon

The effect of nickel contamination under rapid thermal processing （RTP） on the magic denuded zone （MDZ） in Czochralski silicon is investigated. It is found that the bulk defects can effectively getter nickel atoms once the MDZ forms. However,if the silicon sample is initially contaminated with nickel, the MDZ cannot form during the subsequent RTP,and a high density of precipitates occurs near the surface. In conventional IG processes,the DZ can form regardless of the nickel contamination sequence. Based on the facts,we propose that the formation of nickel silicide （Ni3Si） at the surface keeps the concentration of vacancies in the near-surface zone still higher than the critical concentration for oxygen precipitation under the subsequent RTP, which prevents MDZ formation.

Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity

Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.

Electrical conductivity and viscosity of cryolite electrolytes for solar grade silicon(Si-SoG) electrowinning

Electrical conductivity of molten binary and ternary mixtures based on the system NaF-AlF3-SiO2 was investigated by means of a tube–cell （made of pyrolytic boron nitride） with stationary electrodes. Viscosity of the binary system Na3AlF6-SiO2 was measured by computerized torsion pendulum method. It was found that conductivity and viscosity varied linearly with temperature in all investigated mixtures. Obtained content dependence of electrical conductivity （isotherms） was divided into two parts. First, one represented the content region up to 10%（mole fraction） of SiO2;second, the region was with a higher content of SiO2 （from 10%up to 40%）. While the conductivity considerably decreased with content of SiO2 in the second part; it surprisingly rose in the low content range. A small addition of SiO2 to the molten cryolite （up to 10%） could slightly increase viscosity, but had no influence on the slope of this dependence since it is responsible for a glassy-networks formation in the melt. Further addition of SiO2 to the molten cryolite had a huge effect on the viscosity.

GeSi Source/Drain Structure for Suppression of Short Channel Effect in SOI p-MOSFET's

GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.

氢稀释对nc-Si∶H薄膜结构和光致发光的影响

基于X射线衍射仪、喇曼散射、光致发光(PL)和傅里叶红外吸收光谱等技术,详细研究了氢稀释比对纳米晶硅(nc-Si∶H)薄膜结构和光致发光性能的影响。随着氢稀释比的增加,所沉积薄膜的纳米晶硅尺寸单调减小,而晶化率提高。键合结构分析表明,随着氢稀释比增加,nc-Si∶H薄膜中氢含量和Si—H键密度均减小。综合在不同氢稀释比下纳米晶硅尺寸变化、PL峰位移动及PL峰强度变化等特征,nc-Si∶H室温PL光谱被归因于纳米晶硅的量子限制效应。当氢稀释比由96%增大至97%时,氢的钝化作用使PL峰强度升高;当进一步增加氢稀释比至98.5%时,由于H2的生成,使氢的钝化效果显著降低,导致PL峰强度降低。

Optimizing Structure and Processes of Nickel Induced Lateral Crystallization

The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.

Dynamic recrystallization and silicide precipitation behavior of titanium matrix composites under different strains

In order to elucidate the microstructure evolution and silicide precipitation behavior during high-temperature deformation,TiB reinforced titanium matrix composites were subjected to isothermal hot compression at 950℃,strain rate of 0.05 s^(−1) and employing different strains of 0.04,0.40,0.70 and 1.00.The results show that with the increase of strain,a decrease in the content,dynamic recrystallization of theαphase and the vertical distribution of TiB along the compression axis lead to stress stability.Meantime,continuous dynamic recrystallization reduces the orientation difference of the primaryαphase,which weakens the texture strength of the matrix.The recrystallization mechanisms are strain-induced grain boundary migration and particle stimulated nucleation by TiB.The silicide of Ti_(6)Si_(3) is mainly distributed at the interface of TiB andαphase.The precipitation of silicide is affected by element diffusion,and TiB whisker accelerates the precipitation behavior of silicide by hindering the movement of dislocations and providing nucleation particles.

Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing

The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.

Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon

Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.

Individual and synergistic effect of gamma alumina（γ-Al2O3） and strontium on microstructure and mechanical properties of Al-20Si alloy

An optimized combination of gamma alumina (4 wt.%) and strontium (0.1 wt.%) was incorporated in cast Al-20Si alloy to obtain fine form of silicon. During casting process, the amount of γ-Al2O3 was varied from 0.5.6 wt.% to refine primary Si and Sr was varied from 0.05.0.1 wt.% to modify eutectic Si. The results showed that the average size of primary Si is 24 μm for addition of 4 wt.%γ-Al2O3 to the alloy whereas 0.1 wt.% Sr resulted in sphericity of eutectic Si to ~0.6 and average length of ~1.2 μm. The thermal analysis revealed that γ-Al2O3 can act as potential heterogeneous nucleation sites. Moreover, simultaneous addition of γ-Al2O3 and Sr does not poison γ-Al2O3 particles and inhibit their nucleation efficiency as in the case of combined addition of phosphorous and strontium to Al-20Si alloy. Therefore, it was concluded that enhanced tensile strength, i.e., ultimate tensile strength (increase by 20%) and elongation (increase by 23%) in Al-20Si.4γ-Al2O3.0.1wt.%Sr alloy as compared to as-cast Al.20Si alloy can be attributed to refinement of primary Si, modification of eutectic Si and the presence of α(Al) in the alloy as evident from eutectic shift.