DNA发动机将使电脑超微化

硅晶电路还嫌不够小，分子电路要取而代之。由美国朗讯科技的贝尔实验室，以及英国牛津大学的一个跨国科学家小组在(自然)上报告，他们已利用储存基因密码的化学物质，制造出全球第一个DNA发动机(DNA Motor)，为将来制造分子大小的电子电路铺路、此种电路将比硅晶片速度更快、体积更小。该DNA发动机形状像一个电动镊子。由于它的动作是以自然产生的化学反应为基础，因此它有自行组装的能力。其道理十分简单，就是在每个分子组成元件上备贴一个DNA标签，

Resistivity Instability in Polysilicon Resistors Under Metal Interco-nnects and Its Suppression by Compensating Ion Implantation

The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.

An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).

Investigation of shunt solar cells’ currents based on equivalent circuit model

In view of the universality of the parallel connection of solar cells and their mismatch problem, in the present paper, we select two shunt solar cells (connected in parallel) as our research object, and use the equivalent one-diode circuit of the solar cell and the analysis of the two-body model. At first, the equations of current and voltage are deduced from the related electrical laws and the circuit diagram of the two solar cells connected in parallel. Then, according to the experimentally measured data of typical single-crystalline silicon solar cells (125 mm×125 mm), we select the appropriate simulation parameters. Following this, by using the photo-generated current, the shunt resistance, and the serial resistance of one of the shunt solar cells and the load resistance as independent variables, in turn, the changing characteristics of each branch current in the two shunt solar cells are numerically discussed and analyzed for these four cases for the first time. At the same time, we provide a simple physical explanation for the modeling results. Our analyses show that these parameters have different impacts on the internal currents of solar cells connected in parallel. These results provide a reference to solve the problem of connecting solar cells and to develop higher efficiency solar cells and systems. Meanwhile, the results will contribute to a better comprehension of the reasons for efficiency loss of solar cells and systems, and deepen the understanding of the electrical of solar cells behavior for high performance photovoltaic applications.

Simulation of high conversion efficiency and open-circuit voltages of α-si/poly-silicon solar cell

The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.

Study of crystalline silicon solar cells with integrated bypass diodes

This paper reported a novel method of integrating bypass diodes into crystalline silicon solar cells.Bypass diodes which have the opposite p-n junction were formed by printing specific paste on the local surface of solar cells using screen printing,while infrared laser was applied to isolate the diode from the cell after firing.A module of crystalline silicon solar cells with integrated bypass diodes was fabricated and the I-V characteristics were measured under different shade conditions.The experimental results clearly showed that the integrated bypass diodes can effectively stabilize module's short circuit current while reduce the module power loss when shaded as well.