系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约...系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约为2.1 e V,折射率约为3的a-SiO_x∶B∶H薄膜,作为非晶硅顶电池的p1层,以及带隙为2.2~2.5 e V,折射率为2.0~2.5,晶化率为20%~50%的nc-SiO_x∶P∶H薄膜,作为非晶硅/纳米硅叠层电池的中间反射层和纳米硅的底电池n2层。最后将优化后的a-SiO_x∶B∶H和nc-SiO_x∶P∶H薄膜应用到非晶硅/纳米硅薄膜叠层电池中,在0.79 m^2的玻璃基板上制备出初始峰值功率为101.1 W、全面积初始转换效率为12.8%、稳定峰值功率为87.3 W、全面积稳定转换效率为11.1%的非晶硅/纳米硅叠层电池。展开更多
The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 5...The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.展开更多
Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current- voltage and capacitance- voltage characteristics of the Ag/Ti Ox/Si/Ag capacitors are m easured.The thicknes...Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current- voltage and capacitance- voltage characteristics of the Ag/Ti Ox/Si/Ag capacitors are m easured.The thickness of the titanium oxide films arranges from15 0 nm to2 5 0 nm,and their dielectric constants are within40～ 87.As the oxida- tion tim e is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteris- tics becom e better.展开更多
Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. ...Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.展开更多
[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.展开更多
文摘采用射频磁控溅射技术在玻璃基底和单晶硅片(100)上制备了碳硅氧(Si OC)薄膜,通过扫描电镜、X射线衍射、拉曼光谱、X射线光电子能谱及紫外可见透射光谱等技术手段对其进行了分析,研究了在不同溅射气压下所制备薄膜的组分、透过率及光学带隙。结果表明:随着溅射气压的增大,薄膜内部sp^3键含量、透过率及光学带隙均随之增大,sp^3键及其形成的宽带隙σ键对薄膜光学带隙有着较大影响。在溅射气压为3.0 Pa的条件下,薄膜光学带隙为2.67 e V。
文摘系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约为2.1 e V,折射率约为3的a-SiO_x∶B∶H薄膜,作为非晶硅顶电池的p1层,以及带隙为2.2~2.5 e V,折射率为2.0~2.5,晶化率为20%~50%的nc-SiO_x∶P∶H薄膜,作为非晶硅/纳米硅叠层电池的中间反射层和纳米硅的底电池n2层。最后将优化后的a-SiO_x∶B∶H和nc-SiO_x∶P∶H薄膜应用到非晶硅/纳米硅薄膜叠层电池中,在0.79 m^2的玻璃基板上制备出初始峰值功率为101.1 W、全面积初始转换效率为12.8%、稳定峰值功率为87.3 W、全面积稳定转换效率为11.1%的非晶硅/纳米硅叠层电池。
文摘The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.
文摘Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current- voltage and capacitance- voltage characteristics of the Ag/Ti Ox/Si/Ag capacitors are m easured.The thickness of the titanium oxide films arranges from15 0 nm to2 5 0 nm,and their dielectric constants are within40～ 87.As the oxida- tion tim e is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteris- tics becom e better.
基金National Natural Science Foundation of China(60336010)
文摘Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
文摘[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.
