酸化与富磷影响农田土壤硅的移动性

硅是水稻等禾本科作物生长发育不可或缺的营养元素,pH影响着土壤中硅的有效性和形态转化,而土壤磷与硅之间存在明显的竞争吸附效应。以常年水稻-瓜/菜轮作农田土壤为研究对象,进行等摩尔硅磷竞争吸附试验、土壤培养试验和硅分组试验,模拟探究土壤酸化和磷富集对土壤硅的有效性及移动性的影响,以期为农田硅、磷养分管理提供一定的理论依据。结果表明,在pH 3.5~6.4范围内,同时加入等摩尔浓度的硅和磷时,磷的存在会抑制土壤吸附硅,使土壤对硅的吸附量降低78%~350%。土壤对硅的吸附小于对磷的吸附,磷的添加导致了土壤中硅的解吸。土壤酸化和磷添加均降低了土壤对硅的吸附,且在pH较高时添加磷对降低土壤吸硅的效果更为显著。土壤酸化降低了可移动态硅、吸附态硅、有机结合态硅和铁铝锰(氢)氧化物结合态硅的含量,但增加无定形态硅含量。与pH 6.4相比,酸化使可移动态硅和吸附态硅含量分别降低了22.47%~54.32%、10.72%~33.40%;磷添加使可移动态硅含量增加了4.07%~9.40%,吸附态硅含量降低了1.19%~3.53%。pH可调控土壤硅的溶解与吸附-解吸过程,从而影响土壤硅的移动性;磷富集促进土壤吸附态硅的解吸,进而增强土壤硅的移动性。

用CHF_3进行SiO_2反应离子腐蚀后Si表面的电特性

用CHF_3反应离子腐蚀除去SiO_2层之后对Si表面的电特性进行了全面的研究。本研究采用了金属-半导体接触结构,并包括金属-半导体接触加热到它的低共熔温度之后的结果。结论是,用CHF_3腐蚀之后Si表面有被俘获的正电荷,部分正电荷可以通过把金属-半导体接触加热到它的低共熔温度后去除。

C60硅粉混凝土在高寒地区的性能与施工工艺研究

我国北方地区的水工混凝土普遍存在着混凝土冲刷及冻融剥蚀破坏的问题,且存在现场施工的技术难点。本文在分析硅粉混凝土特性、作用机理的基础上,结合新疆玛河红山嘴引水工程,开展C60硅粉混凝土现场浇筑工艺的研究。确定了采用浇筑→一次快速收光→塑料薄膜覆盖→膜上二次收光的施工控制工艺,可很好地克服温差较大的北方寒冷地区硅粉混凝土易产生早期塑性干缩和温度裂缝的问题,为今后类似工程提供借鉴。

大吨位双出杆粘滞阻尼器开发的数值模拟与实验研究

阐述了大吨位双出杆粘滞阻尼器开发的数值与实验研究结果。基于硅油的幂律特性,通过对硅油介质的流态分析,介绍了非牛顿幂律流体模型对粘滞阻尼器耗能和阻尼出力的影响,与粘滞阻尼器的分析模型和计算公式。在商用流体软件平台上利用动网格技术对样品粘滞阻尼器阻尼出力进行了计算;综合实验研究结果,最终确定了大吨位土木用粘滞阻尼器设计的经验方法。另一方面,实验曲线和数值曲线基本吻和,验证了通过数值手段对粘滞阻尼器的出力特性进行预分析,从而提高开发精度、指导产品设计和缩短产品的开发周期的可行性。

CMOS FinFET Fabricated on Bulk Silicon Substrate

A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.

Temperature compensation method of silicon microgyroscope based on BP neural network

The temperature characteristics of a silicon microgyroscope are studied, and the temperature compensation method of the silicon microgyroscope is proposed. First, an open-loop circuit is adopted to test the entire microgyroscope＇s resonant frequency and quality factor variations over temperature, and the zero bias changing trend over temperature is measured via a closed-loop circuit. Then, in order to alleviate the temperature effects on the performance of the microgyroscope, a kind of temperature compensated method based on the error back propagation（BP）neural network is proposed. By the Matlab simulation, the optimal temperature compensation model based on the BP neural network is well trained after four steps, and the objective error of the microgyroscope＇s zero bias can achieve 0.001 in full temperature range. By the experiment, the real time operation results of the compensation method demonstrate that the maximum zero bias of the microgyroscope can be decreased from 12.43 to 0.75（°）/s after compensation when the ambient temperature varies from -40 to 80℃, which greatly improves the zero bias stability performance of the microgyroscope.

SOICMOS Integrated Circuit of Laser Range Finding Working at High Temperatures

Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.

Elastic Tensor and Thermodynamic Property of Magnesium Silicate Perovskite from First-principles Calculations

The thermodynamic and elastic properties of magnesium silicate （MgSiO3） perovskite at high pressure are investigated with the quasi-harmonic Debye model and the first-principles method based on the density functional theory. The obtained equation of state is consistent with the available experimental data. The heat capacity and the thermal expansion coefficient agree with the observed values and other calculations at high pressures and temperatures. The elastic constants are calculated using the finite strain method. A complete elastic tensor of MgSiO3 perovskite is determined in the wide pressure range. The geologically important quantities： Young＇s modulus, Poisson＇s ratio, Debye temperature, and crystal anisotropy, are derived from the calculated data.

Influence of Pressure on SiNx：H Film by LF-PECVD

Hydrogenated silicon nitride films as an effective antireflection and passivation coating of silicon solar cell were prepared on p-type polished silicon substrate （1.0 f^em） by direct LF-PECVD （low frequency plasma enhanced chemical vapor deposition） of Centrotherm. The preferable passivation effect was obtained and the refractive index was in the range of 2.017-2.082. The refractive index of the hydrogenated silicon nitride films became larger with the increase of the pressure. Fourier transform infrared spectroscopy was used to study the pressure influence on the film structural properties. The results highlighted high hydrogen bond and high Si-N bonds density in the film, which were greatly influenced by the pressure. The passivation effect of the films was infuenced by the Si dangling bonds density. Finally the effective minority liftetime degradation with time was shown and discussed by considering the relationship between the structural properties and passivation.

Schottky Barrier Characteristics of Polycrystalline and Epitaxial CoSi_2/n-Si(111) Contacts Formed by Solid State Reaction

Polycrystalline and epitaxial CoSi 2 films are formed on the n-Si (111) substrates by solid state reaction of the as-deposited Co single-layer and Co/Ti bilayer with Si,respectively at different annealing phase.The CoSi 2/Si Schottky contacts are measured with the current-voltage and capacitance-voltage (I-V/C-V) techniques within the range of temperature from 90K to room temperature.The measured I-V characteristics have been analyzed with a model based on the inhomogeneity in Schottky barrier height,i.e.,at high temperatures (≥～200K) or low temperatures but with a large bias,the I-V curves can be described by using the thermionic emission theory with a Gaussian distributed barrier height over the whole junction,while at low temperatures and with a small bias,the current is dominated by some small patches with low barrier height.It results in a plateau-like section in the low temperature I-V curves around 10 -7 A.At room temperature,the barrier height of polycrystalline CoSi 2/Si deduced from the I-V curve is about 0 57eV.For epitaxial CoSi 2,the barrier height depends on its final annealing temperature and increases from 0 54eV to 0 60eV with the annealing temperature increasing from 700℃ to 900℃.

Fabrication and Electrical Properties of Titanium Oxide by Thermally Oxidizing Titanium on Silicon

Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current- voltage and capacitance- voltage characteristics of the Ag/Ti Ox/Si/Ag capacitors are m easured.The thickness of the titanium oxide films arranges from15 0 nm to2 5 0 nm,and their dielectric constants are within40～ 87.As the oxida- tion tim e is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteris- tics becom e better.

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.

Study on coagulation property of metal-polysilicate coagulants in low turbidity water treatment

In order to remove the low turbidity present in surface water, a novel metal-polysilicate coagulant was used to treat the raw water taken from Tanjiang River in Guangdong Province. This study on the effects of Al/Fe molar ratio on the performance of a complex compound formed by polysilicic acid, aluminium and ferric salt (PAFS) showed that PAFS with Al/Fe ratio of 10:3 seemed to have the best coagulation performance in removing turbidity and color. Experimental results showed that under the conditions of polymerization time of 15 d, sedimentation time of 12 min, and pH of 6?8, PAFS with Al/Fe molar ratio of 10:3 had the best coagulation efficiency and lowest residual Al concentration. The turbid- ity decreased from 23.8 NTU to 3.23 NTU and the residual Al concentration was only 0.165 mg/L in the product water. It could be speculated that colloidal impurities and particulate Al were removed by adsorption bridging and electrical neu- tralization of long chain inorganic polymer coagulants.

Fluidization Characteristics of Silicon Particles with a Wide Size Distribution

Fluidization characteristics of silicon particle system are studied by the pressure fluctuation method.The existence of fine particles in the system can improve fluidization. Silicon particles with a wide size distribution,preferably with some fines, behave as Group A particles according to Geldart classification, although the system belongs to Group B actually. The system is also approved to be suitable for organochlorosilane monomer production using a fluidized bed reactor. Experimental data obtained in this work are important for the design and operation of commercial fluidized bed reactors for the production of organochlorosilane monomers.

基于有限元的液压双腔减振刚度性能优化研究

液压减振器在高铁、重型机械和汽车中广泛应用。针对液压减振系统刚度易受不同液压油压缩性、粘压性和抗剪性等特性影响的问题,分析对比不同液压油阻尼特性,获得具有最佳阻尼特性的油液介质。为了优化液压减振刚度,分析计算具有浮动活塞隔离的减振系统的理论刚度。基于流固耦合原理,采用ADINA有限元分析软件,建立了两种硅油减振介质的流固耦合模型,获得了弹性模量和粘度等对刚度的影响程度。仿真结果表明,它与理论计算刚度相差1%,获得了较好的契合度,也验证了采用浮动密封块结构形成上下两级弹簧腔的液压减振器可变刚度的方案的可行性,为减振器的优化设计提供了很好的参考。

Prediction of the Aging of HTV Silicone Rubber Using Chemical Concentration and Polynomial Interpolation Approach

Predicting the lifetime of polymeric insulators is one of the most important research topics in studying the life cycle of high voltage insulators in the power transmission and distribution networks. HTV （high temperature vulcanized） silicone rubber is a high performance dielectric material used within electrical power equipment, in particular transmission and distribution insulators. In this paper, we proposed a new approach using the Newton＇s method and Lagrange method to predict the aging of HTV silicone rubber that are subjected to multiple stress conditions. Concentration of chemical elements such as carbon, oxygen, silicon and aluminum were obtained and evaluated using a SEM （scanning electron microscope） with EDS （energy dispersive X-ray spectroscopy）. Curve fitting using the Newton＇s and Lagrange interpolation methods yield useful linear interpolation equations that describe the aging characteristic of the specimens under study. This approach can be applied to predict the change in chemical concentration of polymeric insulators over the life cycle with good accuracy.

Inner Am monium Salt Carbocyanine Filmson SiSurface and Their Photoelectric Properties

Two inner salt carbocyanines were filmed chemically on the Si surface through Si-O-C bond. The structures were characterized by SERS and XPS. And the spectral response and surface photovoltage spectrum were measured. These results show that the Si wafer can be sensitized by dyes, and the filmed Si wafers have photovoltage effect.

I- VCurve Characterization of n +/p/p+ Silicon Solar Cell

The analysis of solar cell performance has been done by simulating the external I-V characteristics of n +/p/p + single crystal silicon solar cell under high light intensity and 1.5 air mass (AM). This method allows the maximization of solar cell efficiency. To fabricate low-cost n +/p/p + single crystal silicon solar cells, solid source of doped phosphorous and boron was used.

给DT-830数字万用表增加测温功能

本文介绍了给ＤＴ－８３０数字万用表利用硅三级管发射结的温度特性制成的温度传感器，增加其测温功能的方法、原理及制作过程。

Pc-Si and c-Si Cell Studies at Transient and Steady State Conditions in Various Illumination Levels

A set of experiments was designed to study the power performance of a c-Si and a pc-Si cell when exposed to various levels of high illumination. The light concentration ratio, C, ranges from C 〈 1, up to C ≈ 26. An experimental set up was built for the purposes of this project. PV cell modeling is outlined in this paper for isc, Voc and the PV cell temperature, Tc, which predicts those quantities. There the behaviour of the two PV-cells at both transient out steady state conditions is studied. Predicted values are compared against measured ones. A comparison of the experimental values against the theoretically predicted ones is performed for the range C 〈 1 to C ≈ 26. Power recovery is tried through heat removal from both sides of the PV-cells by air forced flow. Experiments show recovery whose degree is close to 100% for low C values. On the other hand, as C grows higher, P~ starts decreasing too. PV cell temperatures reached up to 136 ℃ for C = 25. This is a challenge as reduction of temperature delivers a good amount of heat, in the cogeneration effect, while it has a positive impact to power recovery of the PV cell.