We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through s...We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon （n-Si） wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant （lower than 2.6） in the frequency range of 10-105 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.展开更多
基金This work was supported by the National Natural Science Foundation of China （No.51673181）.
文摘We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon （n-Si） wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant （lower than 2.6） in the frequency range of 10-105 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.
