A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysi...A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.展开更多
文摘A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
