We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H ...We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.展开更多
A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） pl...A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.展开更多
基金supported by the State Key Development Program for Basic Research of China (No.2006CB202601)the National Natural Science Foundation of China (No.51007082)the Natural Science Foundation of Henan Province (No.072300410080)
文摘We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.
基金supported by the National "863" Project of China (Grant No.2006AA05Z409)the "Kaisi" Oversea R&D Schol-arship of Sun Yat-sen University
文摘A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.
