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硅膜制备 被引量:5
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作者 周玉锋 张宇民 韩杰才 《材料导报》 EI CAS CSCD 北大核心 2005年第12期84-86,共3页
介绍了两大类硅膜的制备方法:物理方法与化学方法,其中包括物理方法中的电子束物理气相沉积技术(EB-PVD),目前该技术在国内应用比较少,所以对其工作原理、薄膜质量的影响因素等作了重点介绍。此外还介绍了磁控溅射法、化学气相沉积法、... 介绍了两大类硅膜的制备方法:物理方法与化学方法,其中包括物理方法中的电子束物理气相沉积技术(EB-PVD),目前该技术在国内应用比较少,所以对其工作原理、薄膜质量的影响因素等作了重点介绍。此外还介绍了磁控溅射法、化学气相沉积法、等离子体增强化学气相沉积、热丝化学气相沉积法等硅膜制备方法的基本原理及特点,并对它们的优缺点进行了比较。 展开更多
关键词 硅膜制备 物理气相沉积 EB-PVD 化学气相沉积
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硅膜制备技术及其应用
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作者 张佐兰 田耘 简耀光 《电子器件》 CAS 1989年第1期25-30,35,共7页
一、引言 硅膜广泛用于集成电路和传感器中。硅膜厚度及其均匀性对器件性能影响很大,尤其制备SiO_2上的硅膜是实现集成电路三维结构的关键,它将增加器件设计的灵活性。因此,近年来薄膜制备技术的研究十分活跃。以往固态传感器中常用机... 一、引言 硅膜广泛用于集成电路和传感器中。硅膜厚度及其均匀性对器件性能影响很大,尤其制备SiO_2上的硅膜是实现集成电路三维结构的关键,它将增加器件设计的灵活性。因此,近年来薄膜制备技术的研究十分活跃。以往固态传感器中常用机械研磨和化学腐蚀方法获得微结构,例如:薄膜、埋层和悬板等,但受到硅膜表面状态和机械强度的限制,最薄只能达到10μm以上。本文将综述硅膜的制备方法,简要介绍用电化学腐蚀自停止方法制取(1~2)μm,均匀性为80nm左右硅膜的实验结果及其在传感器中的应用实例。 展开更多
关键词 硅膜制备 机械研究 化学腐蚀
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硅在光学薄膜中的初步应用
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作者 缪金义 朱耀南 《光仪技术》 1989年第1期6-9,共4页
关键词 光学薄 硅膜制备
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Preparation and Characterization of Silicone Rubber Membrane
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作者 刘秀军 刘家祺 +1 位作者 韩煦 白跃华 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2002年第5期618-621,共4页
Pervaporation membrane with preferential permeation for organiccompounds over water was prepared and characterized. Selection ofmembrane material and the effects of polydimethylsiloxane (PDMS),cross-linker, and cataly... Pervaporation membrane with preferential permeation for organiccompounds over water was prepared and characterized. Selection ofmembrane material and the effects of polydimethylsiloxane (PDMS),cross-linker, and catalyst concentrations on performances ofpervaporation membrane at room temperature were discussed. Inaddition, the time of cross-linking, and the kinds of basic plate inthe process of preparation were tested. The formulation ofpervaporation membrane material was determined. 展开更多
关键词 pervaporation membrane preparation condition polyimethylsiloxane CHARACTERIZATION
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Preparation and characterization of polyimide/silica hybrid films
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作者 张明艳 曾恕金 +4 位作者 董铁权 周胜 范勇 张晓虹 雷清泉 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2006年第4期439-443,共5页
A kind of hybrid polyimide films was prepared by synthesizing poly(amic acid)/Silica matrix resin through sol-gel technique and then followed by positing it on a silex glass plate and drying at high temperature. The e... A kind of hybrid polyimide films was prepared by synthesizing poly(amic acid)/Silica matrix resin through sol-gel technique and then followed by positing it on a silex glass plate and drying at high temperature. The effect of silica content on the corona-resistant property of the films was studied. The miscibility between the organic and inorganic phases and its effect on the corona-resistant property were investigated with aminopropyltriethoxysilane, which served as a coupling agent, added into the polyimide composite system. The chemical structure and the surface morphology of the films were characterized by FTIR and AFM respectively. The corona-resistant property of the films was tested by a rod-plate electrode. It proved that the corona-resistant property was enhanced with silica content. It also turned out that the improvement of the miscibility between the two phases due to the presence of covalent force as a result of the addition of the coupling agent had, to some extent, effect on the corona-resistant property of the films. Furthermore, a theory on the corona-resistant property was put forward preliminarily. 展开更多
关键词 POLYIMIDE MORPHOLOGY corona-resistant property
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Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD 被引量:1
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作者 何宝华 杨仕娥 +1 位作者 陈永生 卢景霄 《Optoelectronics Letters》 EI 2011年第3期198-201,共4页
We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H ... We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio. 展开更多
关键词 Chemical vapor deposition Computer simulation Film growth GASES Metallic films Plasma deposition Plasma enhanced chemical vapor deposition
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