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硅表面清洗对7nm热SiO_2栅介质可靠性的影响
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作者 高文钰 刘忠立 +3 位作者 和致经 张永刚 梁秀琴 梁桂荣 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1999年第10期930-935,共6页
实验研究了硅表面清洗方式对7nm 热氧化SiO2 栅介质可靠性的影响.结果表明,稀HF酸漂洗后RCA 清洗时降低SC1(NH4OH/H2O2/H2O)温度对提高栅介质可靠性有利,但仍不如用SC2(HCl/H2O2/H2... 实验研究了硅表面清洗方式对7nm 热氧化SiO2 栅介质可靠性的影响.结果表明,稀HF酸漂洗后RCA 清洗时降低SC1(NH4OH/H2O2/H2O)温度对提高栅介质可靠性有利,但仍不如用SC2(HCl/H2O2/H2O)或H2SO4/H2O2 清洗效果好.稀HF酸漂洗后用H2SO4/H2O2 清洗得到的栅介质不仅表现出优良的击穿电场分布特性和击穿电荷分布特性。 展开更多
关键词 二氧化 可靠性 热氧化 硅表面清洗 栅介质
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A Diamond Electrochemical Cleaning Technique for Organic Contaminants on Silicon Wafer Surfaces 被引量:2
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作者 张建新 刘玉岭 +4 位作者 檀柏梅 牛新环 边永超 高宝红 黄妍妍 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期473-477,共5页
Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied dur... Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique (DECT). The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique. 展开更多
关键词 organic contaminations silicon wafer surface cleaning boron-doped diamond electrodes powerful oxidant micro-roughness electrochemical cleaning
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