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防串扰的3D芯片TSV自动布局 被引量:4
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作者 侯立刚 李春桥 +3 位作者 白澍 汪金辉 刁麓弘 刘伟平 《计算机辅助设计与图形学学报》 EI CSCD 北大核心 2013年第4期578-583,共6页
为了防止3D芯片中的硅过孔(TSV)串扰,提出一种TSV自动排布算法.该算法结合TSV串扰的机理,利用Comsol证明了通过接地TSV解决屏蔽方法的有效性,完成了对接地TSV屏蔽效果的量化;提出电源?接地TSV和信号TSV自动排布算法,其中考虑了不同类型... 为了防止3D芯片中的硅过孔(TSV)串扰,提出一种TSV自动排布算法.该算法结合TSV串扰的机理,利用Comsol证明了通过接地TSV解决屏蔽方法的有效性,完成了对接地TSV屏蔽效果的量化;提出电源?接地TSV和信号TSV自动排布算法,其中考虑了不同类型TSV比例和工艺最小间距对3D芯片性能的影响.最后利用IBM基准电路进行仿真,结果表明,文中算法可以防串扰的目的对电路中TSV进行自动布局. 展开更多
关键词 3D芯片 串扰 硅过孔
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考虑温度效应的MWCNT填充TSV的电模型与特性分析
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作者 苏晋荣 陈雪 张文梅 《中国科技论文》 CAS 北大核心 2016年第14期1632-1636,共5页
将温度效应考虑在内,建立了一对填充多壁碳纳米管的硅过孔阻抗模型,利用该模型计算了一对硅过孔的正向传输系数S21、串扰及延时等物理量,并分析了这些物理量随温度、TSV(Through Silicon Via)结构及材料参数的变化。结果表明,衬底电导... 将温度效应考虑在内,建立了一对填充多壁碳纳米管的硅过孔阻抗模型,利用该模型计算了一对硅过孔的正向传输系数S21、串扰及延时等物理量,并分析了这些物理量随温度、TSV(Through Silicon Via)结构及材料参数的变化。结果表明,衬底电导的温度效应是影响S21参数温度特性的主要原因;降低隔离层介电常数或增加隔离层厚度,可以减小插入损耗,降低串扰和延时,提升传输性能;适当增加节距可以减小60GHz频率以下的插入损耗;增加MWCNT(Multi-walled Carbon Nanotubes)最外层直径能够提升TSV等效电导率,但对减少插损效果甚微。 展开更多
关键词 微电子学与固体电子学 多壁碳纳米管 硅过孔 正向传输系数 串扰 延时
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A Novel Technology for Post-Treating of Porous Silicon Thick Films in H_2O_2
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作者 龙永福 朱自强 赖宗声 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第6期574-578,共5页
The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expec... The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2. 展开更多
关键词 porous silicon POST-TREATMENT H 2O 2
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Theoretical Study of Interaction Between S2 and SiHx (x=1, 2, 3) in Porous Silicon 被引量:1
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作者 李佐 程新路 +1 位作者 王江 陈海花 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第3期281-286,I0001,共7页
The interaction between S2 molecule and SiHx (x=1, 2, 3) in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, ... The interaction between S2 molecule and SiHx (x=1, 2, 3) in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx (x=1, 2, 3) is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6+S2→H3SiH2SiS+HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur. 展开更多
关键词 Porous silicon IR spectrum Binding energy Transition state
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Post-synthesis pore expansion of mesoporous silica SBA-15 in the organic template removal via solvothermal treatment 被引量:3
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作者 李楠 李永生 +5 位作者 陆圣珏 张兴棣 陈健壮 牛德超 顾金楼 施剑林 《Science Bulletin》 SCIE EI CAS CSCD 2015年第11期1019-1025,I0008,共8页
The synthesis of mesoporous material SBA-15 has been extensively reported in the past decades, which possesses a pore diameter of 6-8 nm on average. Here, a simple post-synthesis procedure has been developed to synthe... The synthesis of mesoporous material SBA-15 has been extensively reported in the past decades, which possesses a pore diameter of 6-8 nm on average. Here, a simple post-synthesis procedure has been developed to synthesize SBA-15 with further expanded pore diameter to above 10 nm simply by a solvothermal treatment replacing traditional hydrothermal step for mesopore template removal, which results in efficient pore expansion and the significantly promoted condensation of silica framework as well. This facile approach is believed applicable for pore expansions of other kinds of mesoporous silica materials. 展开更多
关键词 Solvothermal treatment Template removal Pore size expanding Framework condensation. SBA-15
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Nano-photonic crystal formation on highly-doped n-type silicon
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作者 钟福如 贾振红 《Optoelectronics Letters》 EI 2015年第1期10-12,共3页
We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon(PSi) layers with different porosities are possible to be ... We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon(PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model(CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon. 展开更多
关键词 photocatalytic glycol irradiation ultraviolet orange hydroxyl visible hydrothermal tetragonal desorption
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