利用物理气相沉积法制备GaS二维纳米片,通过改变不同的生长条件对GaS纳米片实行可调控生长.采用光学显微镜(optical microscope,OM)、原子力显微镜(atomic force microscope,AFM)、激光共聚焦显微拉曼光谱仪(laser co-focusing micro-Ra...利用物理气相沉积法制备GaS二维纳米片,通过改变不同的生长条件对GaS纳米片实行可调控生长.采用光学显微镜(optical microscope,OM)、原子力显微镜(atomic force microscope,AFM)、激光共聚焦显微拉曼光谱仪(laser co-focusing micro-Raman spectrometer,LCRS)、扫描电子显微镜(scanning electron microscope,SEM)、X射线衍射仪(X-ray diffraction,XRD)及透射电子显微镜(transmission electron microscope,TEM)等分析仪器,对样品的化学成分及形貌结构进行一系列表征.结果表明:制备的GaS纳米片为三角形结构,横向尺寸为1~4μm,样品所得最薄三角形纳米片的厚度为2.5 nm,纳米片内表面组成均匀,为六方晶系,单晶结构,结晶性好,可以长时间在空气中稳定存在.展开更多
The propagation characteristics of the surface-plasmon-polariton （SPP） mode in the single interface of silver （Ag） and gallium lanthanum sulfide （GLS） have been studied both analytically and numerically. The obt...The propagation characteristics of the surface-plasmon-polariton （SPP） mode in the single interface of silver （Ag） and gallium lanthanum sulfide （GLS） have been studied both analytically and numerically. The obtained numerical results show an excellent agreement with the analytical ones. The locations of the spatial resonance point along the direction of propagation were determined for the dielectric and the metal.展开更多
文摘利用物理气相沉积法制备GaS二维纳米片,通过改变不同的生长条件对GaS纳米片实行可调控生长.采用光学显微镜(optical microscope,OM)、原子力显微镜(atomic force microscope,AFM)、激光共聚焦显微拉曼光谱仪(laser co-focusing micro-Raman spectrometer,LCRS)、扫描电子显微镜(scanning electron microscope,SEM)、X射线衍射仪(X-ray diffraction,XRD)及透射电子显微镜(transmission electron microscope,TEM)等分析仪器,对样品的化学成分及形貌结构进行一系列表征.结果表明:制备的GaS纳米片为三角形结构,横向尺寸为1~4μm,样品所得最薄三角形纳米片的厚度为2.5 nm,纳米片内表面组成均匀,为六方晶系,单晶结构,结晶性好,可以长时间在空气中稳定存在.
文摘The propagation characteristics of the surface-plasmon-polariton （SPP） mode in the single interface of silver （Ag） and gallium lanthanum sulfide （GLS） have been studied both analytically and numerically. The obtained numerical results show an excellent agreement with the analytical ones. The locations of the spatial resonance point along the direction of propagation were determined for the dielectric and the metal.
