Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 ...Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.展开更多
文摘Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.
