Y2001-62791-18 0116695硅上硼离子注入扩散与活性化的第一原理预测模拟=First-principles-based predictive simulations of B diffusionand activation in ion implanted Si[会,英]/Theiss,S.&Caturla,M.///2000 IEEE Internation...Y2001-62791-18 0116695硅上硼离子注入扩散与活性化的第一原理预测模拟=First-principles-based predictive simulations of B diffusionand activation in ion implanted Si[会,英]/Theiss,S.&Caturla,M.///2000 IEEE International Conference onSimulation of Semiconductor Processes and Devices.—18～22(EC)Y2001-62791-163 0116696硼激活动力学=Kinetics of Boron activation[会,英]/Mokhberi,A.& Griffin.P.B.//2000 IEEE Interna-tional Conference on Simulation of Semiconductor Pro-cesses and Devices.—163～166(EC)展开更多
In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible t...In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.展开更多
文摘Y2001-62791-18 0116695硅上硼离子注入扩散与活性化的第一原理预测模拟=First-principles-based predictive simulations of B diffusionand activation in ion implanted Si[会,英]/Theiss,S.&Caturla,M.///2000 IEEE International Conference onSimulation of Semiconductor Processes and Devices.—18～22(EC)Y2001-62791-163 0116696硼激活动力学=Kinetics of Boron activation[会,英]/Mokhberi,A.& Griffin.P.B.//2000 IEEE Interna-tional Conference on Simulation of Semiconductor Pro-cesses and Devices.—163～166(EC)
基金supported by the National Basic Research Program of China(Grant No.2015CB352100)
文摘In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.
