ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide...ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide （KOH） solution. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and current-voltage （I-V） curve were used to characterize the structure, morphologies and optoelectronic properties. The results demonstrated that ZnO NRs had wurtzite structures, the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time, well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h. ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs. When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell, the conversion efficiency, short circuit current and open circuit voltage, compared with the unetched ZnO NRs, increased by 0.71%, 2.79 mA and 0.03 V, respectively.展开更多
采用碱蚀刻-热解法制备了无定形中空ZnSnO_3立方体,并利用X射线衍射、扫描电子显微镜、透射电子显微镜、热重分析、N_2吸附-脱附曲线、循环伏安和恒流充放电技术对样品的结构、形貌及电化学性能进行表征。结果表明:所制备的ZnSnO_3呈边...采用碱蚀刻-热解法制备了无定形中空ZnSnO_3立方体,并利用X射线衍射、扫描电子显微镜、透射电子显微镜、热重分析、N_2吸附-脱附曲线、循环伏安和恒流充放电技术对样品的结构、形貌及电化学性能进行表征。结果表明:所制备的ZnSnO_3呈边长约为1μm的无定型中空立方体。作为锂电池负极材料,在100 m A/g电流密度下,首次放电容量高达1 591 m A·h/g,50次循环后放电容量保持在305 m A·h/g。无定形中空ZnSnO_3立方体良好的电化学性能可归因于无定形态及有效缓冲了锂离子嵌入-脱嵌过程引起的体积变化的中空结构。展开更多
The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additiv...The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80~C. Samples＇ surface morphology was observed by scanning electron microscope （SEM）. It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes. Si （100） plane was covered with many small Si-mountaln ranges or long V-shape channels arranged in a crisscross pat- tern. For （110） plane and （111） plane, they were full of a lot of triangle pit-traps （or quadrilateral holes） and twisted earthworm trap pits, respectively. The measured reflectance of the sample was 20.5% at wavelength range of 400--900 nm. These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces. This method should be very valuable for mc-Si solar cells.展开更多
基金Project (21171027) supported by the National Natural Science Foundation of ChinaProject (K1001020-11) supported by the Science and Technology Key Project of Changsha City, ChinaProject ([2010]70) supported by Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China
文摘ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide （KOH） solution. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and current-voltage （I-V） curve were used to characterize the structure, morphologies and optoelectronic properties. The results demonstrated that ZnO NRs had wurtzite structures, the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time, well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h. ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs. When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell, the conversion efficiency, short circuit current and open circuit voltage, compared with the unetched ZnO NRs, increased by 0.71%, 2.79 mA and 0.03 V, respectively.
文摘采用碱蚀刻-热解法制备了无定形中空ZnSnO_3立方体,并利用X射线衍射、扫描电子显微镜、透射电子显微镜、热重分析、N_2吸附-脱附曲线、循环伏安和恒流充放电技术对样品的结构、形貌及电化学性能进行表征。结果表明:所制备的ZnSnO_3呈边长约为1μm的无定型中空立方体。作为锂电池负极材料,在100 m A/g电流密度下,首次放电容量高达1 591 m A·h/g,50次循环后放电容量保持在305 m A·h/g。无定形中空ZnSnO_3立方体良好的电化学性能可归因于无定形态及有效缓冲了锂离子嵌入-脱嵌过程引起的体积变化的中空结构。
基金supported by the Shanghai Aerospace Foundation (Grant No. GC072003)
文摘The investigation of multi-crystalline silicon （mc-Si） surface etching technology is a key point in solar cell research. In this paper, mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80~C. Samples＇ surface morphology was observed by scanning electron microscope （SEM）. It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes. Si （100） plane was covered with many small Si-mountaln ranges or long V-shape channels arranged in a crisscross pat- tern. For （110） plane and （111） plane, they were full of a lot of triangle pit-traps （or quadrilateral holes） and twisted earthworm trap pits, respectively. The measured reflectance of the sample was 20.5% at wavelength range of 400--900 nm. These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces. This method should be very valuable for mc-Si solar cells.
