The metal-conducting single-walled carbon nanotubes （m-SWNTs） with small diameters （0.7 nm-1.1 nm） are selectively removed from the single-walled carbon nanotubes （SWNTs） by using HNOJH2SO4 mixed solution. Semic...The metal-conducting single-walled carbon nanotubes （m-SWNTs） with small diameters （0.7 nm-1.1 nm） are selectively removed from the single-walled carbon nanotubes （SWNTs） by using HNOJH2SO4 mixed solution. Semiconducting single- walled carbon nanotubes （s-SWNTs） can be separated efficiently from the SWNTs with high controllability and purity based on this novel method, and the outcome is characterized by Raman spectrum. Moreover, the organic field effect transistors （OFETs） are fabricated based on the poly （3-hexylthiophene-2, 5-diyl） （P3HT）, and untreated SWNTs and separated SWNTs （s-SWNTs） are mixed with P3HT, respectively. It could be found that the P3HT/s-SWNT device exhibits a better field effect characteristic compared with the P3HT device. The current on/off ratio is increased by 4 times, the threshold voltage is also increased from -28 V to -22 V, and the mobility is increased from 3 ~ 10.3 cmZNs to 5 x 10.3 cm2/Vs.展开更多
基金supported by the National Natural Science Foundation of China(Nos.60676051,60876046,60906022)the Natural Science Fund of Tianjin(Nos.07JCYBJC12700 and 10JCYBJC01100)
文摘The metal-conducting single-walled carbon nanotubes （m-SWNTs） with small diameters （0.7 nm-1.1 nm） are selectively removed from the single-walled carbon nanotubes （SWNTs） by using HNOJH2SO4 mixed solution. Semiconducting single- walled carbon nanotubes （s-SWNTs） can be separated efficiently from the SWNTs with high controllability and purity based on this novel method, and the outcome is characterized by Raman spectrum. Moreover, the organic field effect transistors （OFETs） are fabricated based on the poly （3-hexylthiophene-2, 5-diyl） （P3HT）, and untreated SWNTs and separated SWNTs （s-SWNTs） are mixed with P3HT, respectively. It could be found that the P3HT/s-SWNT device exhibits a better field effect characteristic compared with the P3HT device. The current on/off ratio is increased by 4 times, the threshold voltage is also increased from -28 V to -22 V, and the mobility is increased from 3 ~ 10.3 cmZNs to 5 x 10.3 cm2/Vs.
