异质栅类MOS碳纳米场效应管中量子电容的影响

本研究小组提出的基于异质栅类MOS碳纳米场效应管器件设计结构不仅能增大开关电流比、调节阈值电压、降低器件功耗,而且还能有效消除传统类MOS碳纳米场效应管的双极性传输特性。但是,作为典型的低维系统,该新型器件设计不可避免地受到量子电容的影响。本文在分析其工作原理的基础上首次研究了量子电容对其传输特性的影响。研究结果表明,量子电容不仅能增大该新型器件的关断电流、减小开关电流比,而且还能破坏其单极性传输特性,给其在电路中的应用带来负面影响。本文最后给出了几点减少量子电容影响的建议。

Post-treatment method for improving field emission from carbon nanotubes/nanofibers

A novel post-treatment method is reported for improving the field emission characteristics of screen-printed carbon nanotubes/nanofibers （CNTs/CNFs） cathodes. After the treatment at the temperature of 500℃ in H2 and O2H2 gas for 20 minutes,the CNTs/CNFs cathodes exhibit much better field emission properties than those untreated. The emission current increases from 0.02 mA/cm^2 to 0.5 mA/cm^2 at 3.9 V/μm with a decrease in the turn-on field from 2.4 V to 1.8 V ,and the emission site density is increased by almost four orders in magnitude. The enhanced field emission of treated CNTs/CNFs cathodes is attributed to the appearance of a large number of exposed CNTs/CNFs caused by heat treatment. This surface morphology is very favorable for the electron field emission.

Impacts of Parameter Scaling for Low-Power Applications Using CNTFET （Carbon Nanotube Field Effect Transistor） Models： A Comparative Assessment

This paper provides an extension to the earlier work wherein a comparison between different models that had studied the effects of several parameters scaling on the performance of carbon nano tube field-effect transistors was presented. The evaluation for the studied models, with regard to the scaling effects, was to determine those which best reflect the very essence of carbon nano-tube technologies. Whereas the models subject this comparison （Fettoy, Roy, Stanford, and Southampton） were affected to varying degrees due to such parametric variations, the Stanford model was shown as still being valid for a wide range of chiralities and diameter sizes; a model that is also applicable for circuit simulations. In this paper, we present a comparative assessment of the various models subject to the study with regard to the effect of incorporating multiple carbon nanotubes in the channel region. We also assess the effect of oxide thickness on transistor performance in terms of the supply voltage threshold effects. Results leveraging our findings in this ongoing research endeavor reveal that many research efforts were not efficient to high degree due to high delay and not valid for circuit simulations.

Reduced graphene oxide with a highly restored π-conjugated structure for inkjet printing and its use in all-carbon transistors

An inkjet-printed graphene film is of great importance for next-generation flexible, low cost and high performance electronic devices. However, due to the limitation of the inkjet printing process, the electrical conductivity of inkjet-printed graphene films is limited to N10 S＇cm-1, and achieving a high conductivity of the printed graphene films remains a big challenge. Here, we develop a ＂weak oxidation- vigorous exfoliation＂ strategy to tailor graphene oxide （GO） for meeting all the requirements of highly conductive inkjet-printed graphene films, including a more intact carbon plane and suitable size. The -conjugated structure of the resulting graphene has been restored to a high degree, and its printed films show an ultrahigh conductivity of -420 S-cm-I, which is tens of times higher than previously reported results, suggesting that, aside from developing a highly efficient reduction method, tuning the GO structure could be an alternative way to produce high quality graphene sheets. Using inkjet-printed graphene patterns as source/drain/gate electrodes, and semiconducting single-walled carbon nanotubes （SWCNTs） as channels, we fabricated an all-carbon field effect transistor which shows excellent performance （an on/off ratio of -104 and a mobility of -8 cm2＂V-l＇s-1） compared to previously reported CNT-based transistors, promising the use of nanocarbon materials, graphene and SWCNTs in printed electronics, especially where high performance and flexibility are needed.

Design and analysis of carbon nanotube FET based quaternary full adders

CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic （MVL） computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors （CNTFETs）. The proposed designs use the unique properties of CNTFETs such as achieving a desired threshold voltage by adjusting the carbon nanotube diameters and having the same mobility as p-type and n-type devices. The proposed circuits were simulated under various test conditions using the Synopsys HSPICE simulator with the 32 nm Stanford comprehensive CNTFET model. The proposed designs have on average 32% lower delay, 68% average power, 83% energy consumption, and 77% static power compared to current state-of-the-art quaternary full adders. Simulation results indicated that the proposed designs are robust against process, voltage, and temperature variations, and are noise tolerant.

Facile Fabrication of AII-SWNT Field-Effect Transistors

Field-effect transistors （FETs） have been fabricated using as-grown single-walled carbon nanotubes （SWNTs） for the channel as well as both source and drain electrodes. The underlying Si substrate was employed as the back-gate electrode. Fabrication consisted of patterned catalyst deposition by surface modification followed by dip-coating and synthesis of SWNTs by alcohol chemical vapor deposition （CVD）. The electrodes and channel were grown simultaneously in one CVD process. The resulting FETs exhibited excellent performance, with an I ON/I OFF ratio of 10^6 and a maximum ON-state current （/ON） exceeding 13 uA. The large I ON is attributed to SWNT bundles connecting the SWNT channel with the SWNT electrodes. Bundling creates a large contact area, which results in a small contact resistance despite the presence of Schottky barriers at metallic-semiconducting interfaces. The approach described here demonstrates a significant step toward the realization of metal-free electronics.

Fabrication of single-walled carbon nanotube-based highly sensitive gas sensors

A highly sensitive single-walled carbon nanotube(SWCNT)-based ammonia(NH3) gas detector is manufactured by orderly assembling SWCNT using the dielectrophoretical(DEP) technology.Atom force microscopy(AFM) and scanning electron microscopy(SEM) images revealed that SWCNTs were assembled between the microelectrodes.SWCNTs were affected by the electrophoretic force which was carried out by the related theoretical analysis in a nonuniform electric field.The SWCNT field effect transistors geometry was obtained.The electrical performance of NH3 gas sensor with the SWCNT field effect transistors geometry was tested before and after the adoption of NH3 at room temperature.Experimental results indicated that the efficient assembly of SWCNT was obtained by the applied alternating current voltage with frequency of 2 MHz and amplitude of 10 V.The SWCNTs-based gas sensor had high sensitivity to NH3,and the electrical conductance of NH3 gas sensor reduced two times after interaction with NH3.The SWCNTs surface gas molecules were removed by means of ultraviolet ray irradiation for 10 min.Hence,the fabricated NH3 gas sensor could be reversible.There is a clear evidence that the adsorption of NH3 on the SWCNT channel is easy to be realized.Our theoretical results are consistent with recent experiments.

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.

Theoretical study of current-voltage characteristics of carbon nanotube wire functionalized with hydrogen atoms

A functionalized single-walled carbon nanotube (SWCNT) of a finite length with a ring-like hydrogenation around its surface is designed toward fabrication of a molecular field-effect transistor (FET) device. The molecular wire thus designed is equipped with a quantum dot inside, which is confirmed by theoretical analysis for electronic transport. In particular, the current-voltage (I-V) characteristics under influence of the gate voltage are discussed in detail.