A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, ...A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating （AC） voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the 1--V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.展开更多
基金Project (2010-0008-276) supported for two years by Pusan National University Research GrantNCRC(National Core Research Center) through the National Research Foundation of Korea funded by the Ministry of Education, Science and TechnologyPusan National University Research Grant, 2009
文摘A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating （AC） voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the 1--V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.
