Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001)with different substrate reconstructions.The results indicate that GaN films grown on bare SiC(0001)a...Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001)with different substrate reconstructions.The results indicate that GaN films grown on bare SiC(0001)are of the Ga-polarity,while GaN films grown on SiC(0001)with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface.With the interchange,the GaN films are of the Ga-polarity.展开更多
Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films gro...Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.展开更多
文摘Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001)with different substrate reconstructions.The results indicate that GaN films grown on bare SiC(0001)are of the Ga-polarity,while GaN films grown on SiC(0001)with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface.With the interchange,the GaN films are of the Ga-polarity.
文摘Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.
