Ni0.5Zn0.5Fe2-xCrxO4(0≤x≤0.5)ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural,electrical and magnetic properties.X-...Ni0.5Zn0.5Fe2-xCrxO4(0≤x≤0.5)ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural,electrical and magnetic properties.X-ray powder diffraction results demonstrate that all the prepared samples are well crystallized single-phase spinel structures without secondary phase.As chromium concentration increases,the lattice parameter and crystallite size gradually decrease.The magnetic measurement indicates that saturation magnetization is substantially suppressed by Cr3+doping,changing from 73.5 A·m2/kg at x=0 to 46.3 A·m2/kg at x=0.5.While the room-temperature electrical resistivity is more than four orders of magnitude enhanced by Cr3+substitution,reaching up to 1.1×108Ω·cm at x=0.5.The dielectric constant monotonously decreases with rising frequency for these ferrites,showing a normal dielectric dispersion behavior.The compositional dependence of dielectric constant is inverse with that of electrical resistivity,which originates from the reduced Fe2+/Fe3+electric dipole number by doping,indicating inherent correlation between polarization and conduction mechanism in ferrite.展开更多
The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show...The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show that the thermodynamic stability of Crdoped Fe_3C becomes weaker in terms of the larger formation enthalpy, on the contrary, the metallicity and covalency are found to strengthen to some extent. The magnetic moments of Fe_3C, Fe_(11)CrC_4(g), and Fe_(11)CrC_4(s) are respectively 21.36 μB/cell, 16.92 μB/cell, and 17.62 μB/cell, and in Fe_(11)CrC4(g) and Fe_(11)CrC_4(s), the Fe of Wyckoff positions of 8d and 4c is substituted by Cr. The local magnetic moment of Cr at 8d site is larger than that at 4c site in the doped structure, which is opposite to that of Fe. In low frequency band, the permittivity follows the ranking of Fe_(11)Cr C_4(s)>Cr_3C>Fe_(11)Cr C_4(g)>Fe_3C. Once exceeding a certain frequency, the sequence will be broken. Besides the electron transition, the polarization of atoms also makes a contribution to the dielectric properties.展开更多
The studied sample is a metallic glass in Fe-Si-B system. It is developed with the nominal composition of Fe735-Cu1-Ta3-Si13.5-B9 by single-roller melt spinning technique in air. The dielectric constant and loss facto...The studied sample is a metallic glass in Fe-Si-B system. It is developed with the nominal composition of Fe735-Cu1-Ta3-Si13.5-B9 by single-roller melt spinning technique in air. The dielectric constant and loss factor have been measured both for as cast and annealed samples using Agilent Impedance analyzer. They are found to decrease with frequency up to 10 MHz and remain constant afterwards. The decrease of dielectric constant and loss factor with frequency is due to ceasing of orientational polarizability. Their constancy is owing to presence of only electronic contribution to its polarizability above 10 MHz. Three distinct regions （1-4 MHz, 4-10 MHz and 10 MHz-1 GHz） also noticed from its frequency dependence, which might make it useful in switching and sensor devices. The temperature dependence of dielectric constant and loss factor maintain inverse relationship： （1） dielectric constant increases, and （2） loss factor decreases with annealing temperature for structural relaxation due to thermal agitation.展开更多
In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0...In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.展开更多
基金Project(11604147)supported by the National Natural Science Foundation of ChinaProject(M32048)supported by the Foundation of National Laboratory of Solid State Microstructures,ChinaProject(20142BBE50014)supported by the Jiangxi Province Key Projects of Science and Technology Support Plan,China。
文摘Ni0.5Zn0.5Fe2-xCrxO4(0≤x≤0.5)ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural,electrical and magnetic properties.X-ray powder diffraction results demonstrate that all the prepared samples are well crystallized single-phase spinel structures without secondary phase.As chromium concentration increases,the lattice parameter and crystallite size gradually decrease.The magnetic measurement indicates that saturation magnetization is substantially suppressed by Cr3+doping,changing from 73.5 A·m2/kg at x=0 to 46.3 A·m2/kg at x=0.5.While the room-temperature electrical resistivity is more than four orders of magnitude enhanced by Cr3+substitution,reaching up to 1.1×108Ω·cm at x=0.5.The dielectric constant monotonously decreases with rising frequency for these ferrites,showing a normal dielectric dispersion behavior.The compositional dependence of dielectric constant is inverse with that of electrical resistivity,which originates from the reduced Fe2+/Fe3+electric dipole number by doping,indicating inherent correlation between polarization and conduction mechanism in ferrite.
基金Project(51174252)supported by the Joint Funds of the National Natural Science Foundation of China
文摘The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show that the thermodynamic stability of Crdoped Fe_3C becomes weaker in terms of the larger formation enthalpy, on the contrary, the metallicity and covalency are found to strengthen to some extent. The magnetic moments of Fe_3C, Fe_(11)CrC_4(g), and Fe_(11)CrC_4(s) are respectively 21.36 μB/cell, 16.92 μB/cell, and 17.62 μB/cell, and in Fe_(11)CrC4(g) and Fe_(11)CrC_4(s), the Fe of Wyckoff positions of 8d and 4c is substituted by Cr. The local magnetic moment of Cr at 8d site is larger than that at 4c site in the doped structure, which is opposite to that of Fe. In low frequency band, the permittivity follows the ranking of Fe_(11)Cr C_4(s)>Cr_3C>Fe_(11)Cr C_4(g)>Fe_3C. Once exceeding a certain frequency, the sequence will be broken. Besides the electron transition, the polarization of atoms also makes a contribution to the dielectric properties.
文摘The studied sample is a metallic glass in Fe-Si-B system. It is developed with the nominal composition of Fe735-Cu1-Ta3-Si13.5-B9 by single-roller melt spinning technique in air. The dielectric constant and loss factor have been measured both for as cast and annealed samples using Agilent Impedance analyzer. They are found to decrease with frequency up to 10 MHz and remain constant afterwards. The decrease of dielectric constant and loss factor with frequency is due to ceasing of orientational polarizability. Their constancy is owing to presence of only electronic contribution to its polarizability above 10 MHz. Three distinct regions （1-4 MHz, 4-10 MHz and 10 MHz-1 GHz） also noticed from its frequency dependence, which might make it useful in switching and sensor devices. The temperature dependence of dielectric constant and loss factor maintain inverse relationship： （1） dielectric constant increases, and （2） loss factor decreases with annealing temperature for structural relaxation due to thermal agitation.
基金the National Key Lab of Nano/Micro Fabrication Technology(No.9140C 790310060C79)the National Natural Science Foundation of China(No.60701012)
文摘In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.
