预烧和烧结温度对Sr_3Co_2Fe_(24)O_(41)铁氧体微结构及性能的影响

采用固相反应法制备Sr3Co2Fe24O41六角锶铁氧体粉末,探究了预烧和烧结温度对材料电阻率的影响。随预烧温度上升,材料的主晶相由M相转变为Z相,在预烧温度1200℃获得了纯净的Z相;烧结温度为1150℃时,材料晶粒为均匀的片状,具有较大电阻率。烧结通O2条件的实验表明,进气量变化时（20~40L/h）,材料的电阻率变化不大,改变O2分压（0.2~0.4MPa）时,在0.3MPa时获得了最大的电阻率,其值为1.12×109？·cm。最后,在室温下测试了材料对施加弱磁场的磁电效应（0~500m T）,结果表明Z型铁氧体与M型六角铁氧体相比在室温弱场下具有明显的磁电效应,M型的介电常数则几乎无变化,而Z型铁氧体在0~100m T下介电常数下降,变化率为1.6%。改变测试频率,在200k Hz测试时获得了较大的磁电效应。

Effect of chromium substitution on structural, electrical and magnetic properties of NiZn ferrites

Ni0.5Zn0.5Fe2-xCrxO4(0≤x≤0.5)ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural,electrical and magnetic properties.X-ray powder diffraction results demonstrate that all the prepared samples are well crystallized single-phase spinel structures without secondary phase.As chromium concentration increases,the lattice parameter and crystallite size gradually decrease.The magnetic measurement indicates that saturation magnetization is substantially suppressed by Cr3+doping,changing from 73.5 A·m2/kg at x=0 to 46.3 A·m2/kg at x=0.5.While the room-temperature electrical resistivity is more than four orders of magnitude enhanced by Cr3+substitution,reaching up to 1.1×108Ω·cm at x=0.5.The dielectric constant monotonously decreases with rising frequency for these ferrites,showing a normal dielectric dispersion behavior.The compositional dependence of dielectric constant is inverse with that of electrical resistivity,which originates from the reduced Fe2+/Fe3+electric dipole number by doping,indicating inherent correlation between polarization and conduction mechanism in ferrite.

First-principles study on electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C

The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show that the thermodynamic stability of Crdoped Fe_3C becomes weaker in terms of the larger formation enthalpy, on the contrary, the metallicity and covalency are found to strengthen to some extent. The magnetic moments of Fe_3C, Fe_(11)CrC_4(g), and Fe_(11)CrC_4(s) are respectively 21.36 μB/cell, 16.92 μB/cell, and 17.62 μB/cell, and in Fe_(11)CrC4(g) and Fe_(11)CrC_4(s), the Fe of Wyckoff positions of 8d and 4c is substituted by Cr. The local magnetic moment of Cr at 8d site is larger than that at 4c site in the doped structure, which is opposite to that of Fe. In low frequency band, the permittivity follows the ranking of Fe_(11)Cr C_4(s)>Cr_3C>Fe_(11)Cr C_4(g)>Fe_3C. Once exceeding a certain frequency, the sequence will be broken. Besides the electron transition, the polarization of atoms also makes a contribution to the dielectric properties.

Dielectric Properties of Fe73.5-Cu1-Ta3-Si13.5-B9 Magnetic Alloy

The studied sample is a metallic glass in Fe-Si-B system. It is developed with the nominal composition of Fe735-Cu1-Ta3-Si13.5-B9 by single-roller melt spinning technique in air. The dielectric constant and loss factor have been measured both for as cast and annealed samples using Agilent Impedance analyzer. They are found to decrease with frequency up to 10 MHz and remain constant afterwards. The decrease of dielectric constant and loss factor with frequency is due to ceasing of orientational polarizability. Their constancy is owing to presence of only electronic contribution to its polarizability above 10 MHz. Three distinct regions （1-4 MHz, 4-10 MHz and 10 MHz-1 GHz） also noticed from its frequency dependence, which might make it useful in switching and sensor devices. The temperature dependence of dielectric constant and loss factor maintain inverse relationship： （1） dielectric constant increases, and （2） loss factor decreases with annealing temperature for structural relaxation due to thermal agitation.

Effect of LaNiO_3 Interlayer on the Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Film on Si Substrate

In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.