The effects of electromagnetic vibration on the grain refinement in directional solid- ification were investigated. It was found that the electromagnetic vibration applied in the melt not only can refine grains remark...The effects of electromagnetic vibration on the grain refinement in directional solid- ification were investigated. It was found that the electromagnetic vibration applied in the melt not only can refine grains remarkably but also can enhance both tensile strength and ductility values of Al-6%Si alloy. SEM graphs show that coarse dendrite structure was broken up into a somewhat globular structure, and the morphology of eutectic silicon was changed from flaky to fibrous under electromagnetic vibration treatment. The refine mechanism under electromagnetic vibration was discussed.展开更多
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
Amorphous indium-gallium-zinc oxide （IGZO） transparent conductive thin films are prepared on glass substrates by radio frequency （RF） magnetron sputtering. The effects of seven factors, which are substrate tempera...Amorphous indium-gallium-zinc oxide （IGZO） transparent conductive thin films are prepared on glass substrates by radio frequency （RF） magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 ℃, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 ℃.展开更多
基金supported by National Natural Science Foundation of China(No.59871026)the Science and Technology Committee of Shanghai (04ZD14002)
文摘The effects of electromagnetic vibration on the grain refinement in directional solid- ification were investigated. It was found that the electromagnetic vibration applied in the melt not only can refine grains remarkably but also can enhance both tensile strength and ductility values of Al-6%Si alloy. SEM graphs show that coarse dendrite structure was broken up into a somewhat globular structure, and the morphology of eutectic silicon was changed from flaky to fibrous under electromagnetic vibration treatment. The refine mechanism under electromagnetic vibration was discussed.
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
文摘Amorphous indium-gallium-zinc oxide （IGZO） transparent conductive thin films are prepared on glass substrates by radio frequency （RF） magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 ℃, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 ℃.
