Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are...Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.展开更多
A series of Cr/SmCo/Cr films with high Sm concentration(37.7at%) were prepared by magnetron sputtering.Effects of SmCo thickness,annealing temperature,and annealing time on magnetic properties and crystal structure we...A series of Cr/SmCo/Cr films with high Sm concentration(37.7at%) were prepared by magnetron sputtering.Effects of SmCo thickness,annealing temperature,and annealing time on magnetic properties and crystal structure were carefully studied.Results show that crystallization degree and phase transition in the films can be controlled by the SmCo thickness and optimized by properly increasing the annealing temperature and extending the annealing time.Finally,a SmCo film with high magnetic properties and low MEI was constructed.展开更多
We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling ...We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted： observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electricalIy controlled magnetization switching.展开更多
A novel magnetic-controlled switcher type fault current limiter （FCL） for high voltage electric network is presented. The current limiting principle of the FCL and the bias current influence on the characteristic of...A novel magnetic-controlled switcher type fault current limiter （FCL） for high voltage electric network is presented. The current limiting principle of the FCL and the bias current influence on the characteristic of the FCL axe discussed. The experiments on the 220 V/50 A test model show that the FCL can limit the fault current swiftly and effectively. Under the normal state, the bias current adjustment can change the FCL voltage loss; under the fault state, the steady fault current can be easily adjusted to the preset level by bias current regulating. The experimental result is in accordance with the principle analysis and the FCL has the advantages of flexible control strategy and simple and reliable structure.展开更多
文摘Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.
基金supported by the National Natural Science Foundation of China(Grant Nos.50901007 and 11174020)the Postdoctoral Science Foundation of China(Grant No.201003049)+2 种基金the Foundation of Key Laboratory for Advanced Materials Processing Technology,Ministry of Education,China(Grant No.2010001)the Fundamental Research Funds for the Central Universitiesthe New Teacher Foundation of Ministry of Education(Grant No.200800081030)
文摘A series of Cr/SmCo/Cr films with high Sm concentration(37.7at%) were prepared by magnetron sputtering.Effects of SmCo thickness,annealing temperature,and annealing time on magnetic properties and crystal structure were carefully studied.Results show that crystallization degree and phase transition in the films can be controlled by the SmCo thickness and optimized by properly increasing the annealing temperature and extending the annealing time.Finally,a SmCo film with high magnetic properties and low MEI was constructed.
基金Supported by National Natural Science Foundation of China under Grant Nos.11174088,11175067,11274124
文摘We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted： observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electricalIy controlled magnetization switching.
基金the National Basic Research Program(973) of China (No. 2005CB221505)the Research Fund for Doctoral Program of High Education of China(No. 20050248058)
文摘A novel magnetic-controlled switcher type fault current limiter （FCL） for high voltage electric network is presented. The current limiting principle of the FCL and the bias current influence on the characteristic of the FCL axe discussed. The experiments on the 220 V/50 A test model show that the FCL can limit the fault current swiftly and effectively. Under the normal state, the bias current adjustment can change the FCL voltage loss; under the fault state, the steady fault current can be easily adjusted to the preset level by bias current regulating. The experimental result is in accordance with the principle analysis and the FCL has the advantages of flexible control strategy and simple and reliable structure.
