磁控溅射法在立方织构镍基底上制备CeO_2缓冲层

论述了具有立方织构的金属镍基底上 ,采用射频磁控溅射的方法制备CeO2 缓冲层。以Ar/H2 混合气体作为溅射气体 ,有效地抑制了NiO的形成 ,获得纯c轴取向的CeO2 薄膜。X射线 φ扫描、ω扫描和极图的测试分析表明 ,CeO2 薄膜在平面内和垂直于膜面方向晶粒都是有序排列的 ,具有良好的立方织构。

磁控溅射铝硅合金膜的工艺研究

通过对Varian3180磁控溅射台溅射的Al-Sil％合金膜工艺的研究，得到了满足工艺线要求的工艺条件，完成了大规模集成电路的金属化要求，从而提高了集成电路的高可靠性。

Properties of W/DLC/W-S-C composite films fabricated by magnetron sputtering

A kind of W/DLC/W-S-C composite film was fabricated by magnetron sputtering method.Effects of WSx content on the structure and the adhesion of the composite films were investigated.In addition,tribological behavior of the composite films was studied in the conditions of the ambient air and N2 gas atmosphere by ball-on-disk tester.The results indicate that the composite films show dense and amorphous microstructure.The WCx and WSx compounds are found in amorphous diamond like carbon matrix in the top layers of W-S-C.A proper WSx content is beneficial for improving the adhesion of the composite films.In air atmosphere,the composite films with high C content have better wear resistance and the friction coefficients range from 0.15 to 0.25.In N2 condition,high WSx content is benefit for the wear resistance and the friction coefficients of the composite films range from 0.03 to 0.1.