扭矩作用下钴铁氧体粘型结复合材料中磁-机效应与温度的关系研究

研究了扭矩作用下,在-38～90℃范围内环形钴铁氧体复合材料的磁-机效应与温度的关系。测量了作为作用扭矩函数的外部轴向磁场的变化。观测了室温（22℃）条件下的磁滞后量Δτ和磁-机灵敏度Sm.作为温度的函数,在整个温度范围内,2个量都随着温度的升高而减少,但在温度高于60℃时,磁-机滞后变化很小,可以忽略不计,而且外部磁场随作用扭矩成线性变化。利用磁致伸缩、磁各向异性、自发磁化及畴壁钉札等理论对磁-机效应与温度的关系进行了分析。

铁磁试件的力-磁效应分析和相关参数估算

为了有效地表征铁磁材料力-磁效应的磁化规律,对Langevin定律进行了修正.采用了一种新的技术处理方法,引入了有效场因子a、磁畴同向取向阻尼因子γ、磁畴场常数β、磁致伸缩与磁化强度关联系数b等基本概念,并估算了这些量数值的大小和基本的变化规律.分析了力-磁效应的基本特征,从定性和定量的角度估算了应力对试件磁化的影响.在这种模型中,说明地磁场对力-磁效应的产生具有不可缺少的作用.

超磁致伸缩执行器应力耦合磁化模型及求逆算法

超磁致伸缩执行器在其工作过程中易受环境影响,尤其在精密定位与进给应用中,执行器最易受外部应力的影响。将工作在压应力影响下的超磁致伸缩执行器作为研究对象,引用均质能量场模型和磁机耦合理论,利用磁机耦合理论中求取的平均磁化强度作为均质能量场模型中的磁滞算子,并引入应力对均质能量场模型中矫顽场密度函数及交互场密度函数的影响,提出了超磁致伸缩执行器应力耦合磁化模型。对模型进行了离散化处理,并根据离散模型给出了求逆算法。对执行器在受0、10、20、100MPa压应力下进行了仿真,计算且图示了求逆算法与模型的误差,仿真结果证明了模型和求逆算法的有效性。

钴铁复合材料在磁弹性扭矩传感器中的实验研究

研究了金属烧结型钴铁复合材料的材料特性,在低磁场条件下,这些材料具有很高的磁致伸缩及压磁系数d33。用该材料制作的环形样品被钎焊到不锈钢轴表面上,测量了扭矩作用下材料的磁机效应。结果表明,作为一种新的磁机材料,该材料适用于磁弹性扭矩传感器。

Pulse Electromagnetic Effect on Metal Melts

The aim of the work was the study of the effect of NEMP （nanosecond electromagnetic pulses） on steel properties. Steel treatment was performed under the workshop conditions. The mechanical properties and the microstructure of the experimental samples and samples prepared by usual way were analyzed. The treatment of metal melt with nanosecond electromagnetic pulses at the crystallization stage makes it possible to change mechanical properties of metal and its structure.

Levitation of Extended States in a Random Magnetic Field with a Finite Mean

We study the localization properties of electrons in a two-dimensional system in a random magnetic field with the average and the amplitude of the magnetic field fluctuations δB. The localization length of the system is calculated by using the finite-size scaling method combined with the transfer-matrix technique. In the case of weak δB, we find that the random magnetic field system is equivalent to the integer quantum Hall effect system, namely, the energy band splits into a series of disorder broadened Landau bands, at the centers of which states are extended with the localization length exponent . With increasing δB, the extended states float up in energy, which is similar to the levitation scenario proposed for the integer quantum Hall effect.

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors （ME-OFET） that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric poly（vinylidene fluoride-co-trifluoroethylene） layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-OFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-OFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10,000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.

Mechanocaloric materials for solid-state cooling

This article reviews the up-to-date progress in mechanocaloric effect and materials near ambient temperature. For elastocaloric materials, we focus on directly measured temperature change and its entropy origin in nonmagnetic and magnetic shape memory alloys. In terms of barocaloric materials, change in magnetic state, volume and shift of transition temperature due to hydrostatic pressure are systematically compared. We propose advantages and challenges of elastocaloric materials for solidstate cooling. Strategies to enhance elastocaloric and mechanical stability under long-term mechanical cycles are presented. Finally, we conclude with an outlook on the prospect of elastocaloric cooling application.