Based on a classical Heisenberg lattice model with dipole-dipole interaction and the method of spin dynamic simulation, the magnetic configurations (MC), hysteresis loops (HL) and magnetic resistance (MR) of the nanom...Based on a classical Heisenberg lattice model with dipole-dipole interaction and the method of spin dynamic simulation, the magnetic configurations (MC), hysteresis loops (HL) and magnetic resistance (MR) of the nanomagnets with different geometries, such as circle, square and rectangle, are studied for different directions of applied field. In the case of perpendicular field to the plane, the magnetization and MR are reversible and have not hysteresis. When the field is applied in the plane, the HL is irreversible and is qualitatively well agreeable with the current experimental results. The MR loop is also irreversible and appears two peaks distributed at two sides around zero field. The peaks of magnetic resistance are relative to the vortex state or similar configuration. Large easy-axis anisotropy will suppress the MC anisotropy, and the large magnetoresistance effect disappears.展开更多
Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room tem...Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.展开更多
文摘Based on a classical Heisenberg lattice model with dipole-dipole interaction and the method of spin dynamic simulation, the magnetic configurations (MC), hysteresis loops (HL) and magnetic resistance (MR) of the nanomagnets with different geometries, such as circle, square and rectangle, are studied for different directions of applied field. In the case of perpendicular field to the plane, the magnetization and MR are reversible and have not hysteresis. When the field is applied in the plane, the HL is irreversible and is qualitatively well agreeable with the current experimental results. The MR loop is also irreversible and appears two peaks distributed at two sides around zero field. The peaks of magnetic resistance are relative to the vortex state or similar configuration. Large easy-axis anisotropy will suppress the MC anisotropy, and the large magnetoresistance effect disappears.
基金supported by the National Natural Science Foundation of China(Grant No.60176001)Special Funds for the Major State Basic Research Projects(Grant Nos.G20000365 and G20000683)
文摘Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.
